Mask defects inspection and imaging is one of the most important issues for any pattern transfer lithography technology. This is especially true for EUV lithography where the wavelength-specific properties of masks and defects necessitate actinic inspection for a faithful prediction of defect printability and repair performance. In this paper we will present a technique to obtain a quantitative characterization of mask phase defects from EUV aerial images. We apply this technique to measure the aerial image phase of native defects on a blank mask, measured with the SEMATECH Berkeley Actinic Inspection Tool (AIT) an EUV zoneplate microscope that operates at Lawrence Berkeley National Laboratory. The measured phase is compared with prediction...
A method for actinic inspection of EUV mask blanks is described, in which EUV photoresist is applied...
Optical projection lithography is the predominant microlithography technique that is used in the sem...
We discuss the impact of various noise sources and the optical design in bright field extreme ultrav...
The authors describe the implementation of a phase-retrieval algorithm to reconstruct phase and comp...
We describe the imaging and characterization of native defects on a full field extreme ultraviolet (...
Despite tremendous progress and learning with EUV lithography, quantitative experimental information...
The high volume inspection equipment currently available to support development of EUV blanks is non...
There's a big push for development and commercialization of extreme ultraviolet (EUV) lithography fo...
Aerial image measurement plays a key role in the development of patterned reticles for each generati...
This dissertation focuses on issues related to extreme ultraviolet (EUV) lithography masktechnology:...
The effort to produce defect-free mask blanks for EUV lithography relies on increasing the detection...
The availability of defect-free masks remains one of the key challenges for inserting extreme ultrav...
The ability to fabricate defect-free mask blanks is a well-recognized challenge in enabling extreme ...
Determining the printability of substrate defects beneath the extreme ultraviolet (EUV) reflecting m...
An approximate method is proposed to calculate the EUV scattering from a defect within a multilayer ...
A method for actinic inspection of EUV mask blanks is described, in which EUV photoresist is applied...
Optical projection lithography is the predominant microlithography technique that is used in the sem...
We discuss the impact of various noise sources and the optical design in bright field extreme ultrav...
The authors describe the implementation of a phase-retrieval algorithm to reconstruct phase and comp...
We describe the imaging and characterization of native defects on a full field extreme ultraviolet (...
Despite tremendous progress and learning with EUV lithography, quantitative experimental information...
The high volume inspection equipment currently available to support development of EUV blanks is non...
There's a big push for development and commercialization of extreme ultraviolet (EUV) lithography fo...
Aerial image measurement plays a key role in the development of patterned reticles for each generati...
This dissertation focuses on issues related to extreme ultraviolet (EUV) lithography masktechnology:...
The effort to produce defect-free mask blanks for EUV lithography relies on increasing the detection...
The availability of defect-free masks remains one of the key challenges for inserting extreme ultrav...
The ability to fabricate defect-free mask blanks is a well-recognized challenge in enabling extreme ...
Determining the printability of substrate defects beneath the extreme ultraviolet (EUV) reflecting m...
An approximate method is proposed to calculate the EUV scattering from a defect within a multilayer ...
A method for actinic inspection of EUV mask blanks is described, in which EUV photoresist is applied...
Optical projection lithography is the predominant microlithography technique that is used in the sem...
We discuss the impact of various noise sources and the optical design in bright field extreme ultrav...