The single-event upset (SEU) responses of 16 Kbit to 1 Mbit SRAMs irradiated with low and high-energy heavy ions are reported. Standard low-energy heavy ion tests appear to be sufficiently conservative for technologies down to 0.5 {micro}m
The ESA SEU-Monitor, a 2 Gbit DDR2 SDRAM and a 100 V n-channel power MOSFET have been irradiated at ...
The radiation tolerance of a commercial 0.13 mu m CMOS technology is investigated. Total ionizing do...
The static random access memory (SRAM) of an ultralow power system-on-chip (SoC) was tested for sing...
Silicon-on-insulator (SOI) technologies have been developed for radiation-hardened military and spac...
The single event upset (SEU) imaging has been applied at the GSI heavy ion microprobe to determine t...
The single event upset (SEU) imaging has been applied at the GSI heavy ion microprobe to determine t...
The single event upset (SEU) imaging has been applied at the GSI heavy ion microprobe to determine t...
Static random access memory cells (SRAM) are high-speed semiconductor memory that uses flip-flop to...
heavy ion beams from their 88-inch Cyclotron. The SRAM was shown to be immune to single event latchu...
Several VLSI devices that are not radiation hardened are still being used in spacecraft systems. The...
The power consumption of Static Random Access Memory (SRAM) has become an important issue for modern...
A dedicated high-speed 18 Kbit static memory featuring synchronous mode, parity and dual port access...
A dedicated high-speed 18 Kbit static memory featuring synchronous mode, parity and dual port access...
We demonstrated the suitability of low-energy accelerators to SEU testing as an inexpensive alternat...
We demonstrated the suitability of low-energy accelerators to SEU testing as an inexpensive alternat...
The ESA SEU-Monitor, a 2 Gbit DDR2 SDRAM and a 100 V n-channel power MOSFET have been irradiated at ...
The radiation tolerance of a commercial 0.13 mu m CMOS technology is investigated. Total ionizing do...
The static random access memory (SRAM) of an ultralow power system-on-chip (SoC) was tested for sing...
Silicon-on-insulator (SOI) technologies have been developed for radiation-hardened military and spac...
The single event upset (SEU) imaging has been applied at the GSI heavy ion microprobe to determine t...
The single event upset (SEU) imaging has been applied at the GSI heavy ion microprobe to determine t...
The single event upset (SEU) imaging has been applied at the GSI heavy ion microprobe to determine t...
Static random access memory cells (SRAM) are high-speed semiconductor memory that uses flip-flop to...
heavy ion beams from their 88-inch Cyclotron. The SRAM was shown to be immune to single event latchu...
Several VLSI devices that are not radiation hardened are still being used in spacecraft systems. The...
The power consumption of Static Random Access Memory (SRAM) has become an important issue for modern...
A dedicated high-speed 18 Kbit static memory featuring synchronous mode, parity and dual port access...
A dedicated high-speed 18 Kbit static memory featuring synchronous mode, parity and dual port access...
We demonstrated the suitability of low-energy accelerators to SEU testing as an inexpensive alternat...
We demonstrated the suitability of low-energy accelerators to SEU testing as an inexpensive alternat...
The ESA SEU-Monitor, a 2 Gbit DDR2 SDRAM and a 100 V n-channel power MOSFET have been irradiated at ...
The radiation tolerance of a commercial 0.13 mu m CMOS technology is investigated. Total ionizing do...
The static random access memory (SRAM) of an ultralow power system-on-chip (SoC) was tested for sing...
DOI
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