We present the results of coating the first set of optical elements for an alpha-class extreme-ultraviolet (EUV) lithography system, the Engineering Test Stand (ETS). The optics were coated with Mo/Si multilayer mirrors using an upgraded DC-magnetron sputtering system. Characterization of the near-normal incidence EUV reflectance was performed using synchrotron radiation from the Advanced Light Source at the Lawrence Berkeley National Laboratory. Stringent requirements were met for these multilayer coatings in terms of reflectance, wavelength matching among the different optics, and thickness control across the diameter of each individual optic. Reflectances above 65% were achieved at 13.35 nm at near-normal angles of incidence. The run-to-...
Extreme ultraviolet (EUV) multilayer coatings are presently widely used in both science and technolo...
The development of microelectronics is always driven by reducing transistor size and increasing inte...
The imaging specifications for extreme ultraviolet lithography (EUVL) projection optics parallel tho...
Multilayer mirror coatings which reflect extreme ultraviolet (EUV) radiation are a key enabling tech...
Two new sets of projections optics for the prototype 10X reduction EUV lithography system were coate...
The topic of this paper is the fabrication and characterization of EUV reflective coatings based on ...
EUV lithography requires, because of the wavelength of 13.5 nm, all reflective optics which can be r...
In contrast to vacuum ultraviolet (VUV) and deep ultraviolet (DUV) light used for current lithograph...
Abstract: Extreme ultraviolet lithography (EUVL) is widely seen as a key technology for future semic...
Multilayer coatings form a key component of EUV optical systems. The research required to develop th...
The demand for enhanced optical resolution in order to structure and observe ever smaller details ha...
A new set of mirrors for the SANDIA I OX microstepper has been fabricated. The optics have been test...
ABSTRACT A new set of mirrors for the SANDIA 10X microstepper has been fabricated. The optics have b...
We have designed and tested a-periodic multilayer structures containing protective capping layers in...
The development of microelectronics is always driven by reducing transistor size and increasing inte...
Extreme ultraviolet (EUV) multilayer coatings are presently widely used in both science and technolo...
The development of microelectronics is always driven by reducing transistor size and increasing inte...
The imaging specifications for extreme ultraviolet lithography (EUVL) projection optics parallel tho...
Multilayer mirror coatings which reflect extreme ultraviolet (EUV) radiation are a key enabling tech...
Two new sets of projections optics for the prototype 10X reduction EUV lithography system were coate...
The topic of this paper is the fabrication and characterization of EUV reflective coatings based on ...
EUV lithography requires, because of the wavelength of 13.5 nm, all reflective optics which can be r...
In contrast to vacuum ultraviolet (VUV) and deep ultraviolet (DUV) light used for current lithograph...
Abstract: Extreme ultraviolet lithography (EUVL) is widely seen as a key technology for future semic...
Multilayer coatings form a key component of EUV optical systems. The research required to develop th...
The demand for enhanced optical resolution in order to structure and observe ever smaller details ha...
A new set of mirrors for the SANDIA I OX microstepper has been fabricated. The optics have been test...
ABSTRACT A new set of mirrors for the SANDIA 10X microstepper has been fabricated. The optics have b...
We have designed and tested a-periodic multilayer structures containing protective capping layers in...
The development of microelectronics is always driven by reducing transistor size and increasing inte...
Extreme ultraviolet (EUV) multilayer coatings are presently widely used in both science and technolo...
The development of microelectronics is always driven by reducing transistor size and increasing inte...
The imaging specifications for extreme ultraviolet lithography (EUVL) projection optics parallel tho...