Add to ORKGIn this paper we present the electrical performance of MOS capacitors with ZrO<sub>2</sub> gate dielectric prepared by e-beam evaporation of zirconium and yttrium stabilized zirconia (YSZ) and subsequent thermal treatment. To this stage we have reached an equivalent oxide thickness (EOT) of 1.9 nm. The effect of post-oxidation annealing on Zr incorporation into the Si substrate is investigated. SIMS analysis showed no signs of Zr diffusion in the substrate at temperatures as high as 900°C and that significant diffusion occurs only at 1100°
10.1016/j.mseb.2004.12.023Materials Science and Engineering B: Solid-State Materials for Advanced Te...
Solution processed ZrO2 and its implementation as the active channel material in TFTs has already be...
International audienceZirconia films are already used as thermal barrier, sensors and fuel cells and...
The electrical characteristics of MOS capacitors with ZrO2 gate dielectric prepared by e-beam evapor...
In the advancement of metal–oxide–semiconductor technology, Si-based semiconductor, with SiO2 as out...
A tetragonal ZrO2 film stabilized by incorporating Ge atoms from an underlying Ge layer through a th...
Recently crystallized gate dielectrics have attracted considerable interest because they are promisi...
The high-kappa gate dielectrics, specifically amorphous films offer salient features such as excepti...
The high-kappa gate dielectrics, specifically amorphous films offer salient features such as excepti...
The characteristics of ultrathin ZrO2 films deposited using molecular oxygen and the zirconium precu...
[[abstract]]This work investigates the effects of postannealing on the bulk and interfacial characte...
textOver the past decades, continuing advancements in processes and tools and the introduction of n...
textOver the past decades, continuing advancements in processes and tools and the introduction of n...
ZrO2 films with a thickness as low as 4 nm and a roughness of about 0.2 nm have been deposited on Si...
Zirconium oxide (ZrO2) films were investigated as a potential replacement for silicon dioxide gate d...
10.1016/j.mseb.2004.12.023Materials Science and Engineering B: Solid-State Materials for Advanced Te...
Solution processed ZrO2 and its implementation as the active channel material in TFTs has already be...
International audienceZirconia films are already used as thermal barrier, sensors and fuel cells and...
The electrical characteristics of MOS capacitors with ZrO2 gate dielectric prepared by e-beam evapor...
In the advancement of metal–oxide–semiconductor technology, Si-based semiconductor, with SiO2 as out...
A tetragonal ZrO2 film stabilized by incorporating Ge atoms from an underlying Ge layer through a th...
Recently crystallized gate dielectrics have attracted considerable interest because they are promisi...
The high-kappa gate dielectrics, specifically amorphous films offer salient features such as excepti...
The high-kappa gate dielectrics, specifically amorphous films offer salient features such as excepti...
The characteristics of ultrathin ZrO2 films deposited using molecular oxygen and the zirconium precu...
[[abstract]]This work investigates the effects of postannealing on the bulk and interfacial characte...
textOver the past decades, continuing advancements in processes and tools and the introduction of n...
textOver the past decades, continuing advancements in processes and tools and the introduction of n...
ZrO2 films with a thickness as low as 4 nm and a roughness of about 0.2 nm have been deposited on Si...
Zirconium oxide (ZrO2) films were investigated as a potential replacement for silicon dioxide gate d...
10.1016/j.mseb.2004.12.023Materials Science and Engineering B: Solid-State Materials for Advanced Te...
Solution processed ZrO2 and its implementation as the active channel material in TFTs has already be...
International audienceZirconia films are already used as thermal barrier, sensors and fuel cells and...