10.1016/j.mseb.2004.12.023Materials Science and Engineering B: Solid-State Materials for Advanced Technology1181-3122-126MSBT
(ZrO2)0.66(HfO2)0.34 dielectric films on p-Si (100) were grown by atomic layer deposition method, fo...
(ZrO2)0.66(HfO2)0.34 dielectric films on p-Si (100) were grown by atomic layer deposition method, fo...
(ZrO2)0.66(HfO2)0.34 dielectric films on p-Si (100) were grown by atomic layer deposition method, fo...
In the advancement of metal–oxide–semiconductor technology, Si-based semiconductor, with SiO2 as out...
The characteristics of ultrathin ZrO2 films deposited using molecular oxygen and the zirconium precu...
The high-kappa gate dielectrics, specifically amorphous films offer salient features such as excepti...
The high-kappa gate dielectrics, specifically amorphous films offer salient features such as excepti...
Zirconium oxide (ZrO2) is an important material with a potential for a wide range of technological a...
Abstract. (ZrO2)0.66(HfO2)0.34 dielectric films on p-Si (100) were grown by atomic layer deposition ...
We deposited ZrO2 thin films by atomic-layer deposition (ALD) using zirconium tertiary–butoxide [Zr(...
We deposited ZrO2 thin films by atomic-layer deposition (ALD) using zirconium tertiary–butoxide [Zr(...
Zirconium oxide (ZrO2) is an important material with a potential for a wide range of technological a...
We deposited ZrO2 thin films by atomic-layer deposition (ALD) using zirconium tertiary–butoxide [Zr(...
We deposited ZrO2 thin films by atomic-layer deposition (ALD) using zirconium tertiary–butoxide [Zr(...
Zirconium oxide (ZrO2) films were investigated as a potential replacement for silicon dioxide gate d...
(ZrO2)0.66(HfO2)0.34 dielectric films on p-Si (100) were grown by atomic layer deposition method, fo...
(ZrO2)0.66(HfO2)0.34 dielectric films on p-Si (100) were grown by atomic layer deposition method, fo...
(ZrO2)0.66(HfO2)0.34 dielectric films on p-Si (100) were grown by atomic layer deposition method, fo...
In the advancement of metal–oxide–semiconductor technology, Si-based semiconductor, with SiO2 as out...
The characteristics of ultrathin ZrO2 films deposited using molecular oxygen and the zirconium precu...
The high-kappa gate dielectrics, specifically amorphous films offer salient features such as excepti...
The high-kappa gate dielectrics, specifically amorphous films offer salient features such as excepti...
Zirconium oxide (ZrO2) is an important material with a potential for a wide range of technological a...
Abstract. (ZrO2)0.66(HfO2)0.34 dielectric films on p-Si (100) were grown by atomic layer deposition ...
We deposited ZrO2 thin films by atomic-layer deposition (ALD) using zirconium tertiary–butoxide [Zr(...
We deposited ZrO2 thin films by atomic-layer deposition (ALD) using zirconium tertiary–butoxide [Zr(...
Zirconium oxide (ZrO2) is an important material with a potential for a wide range of technological a...
We deposited ZrO2 thin films by atomic-layer deposition (ALD) using zirconium tertiary–butoxide [Zr(...
We deposited ZrO2 thin films by atomic-layer deposition (ALD) using zirconium tertiary–butoxide [Zr(...
Zirconium oxide (ZrO2) films were investigated as a potential replacement for silicon dioxide gate d...
(ZrO2)0.66(HfO2)0.34 dielectric films on p-Si (100) were grown by atomic layer deposition method, fo...
(ZrO2)0.66(HfO2)0.34 dielectric films on p-Si (100) were grown by atomic layer deposition method, fo...
(ZrO2)0.66(HfO2)0.34 dielectric films on p-Si (100) were grown by atomic layer deposition method, fo...
DOI
Add to ORKG