Synthesis and fabrication of ZnO nanorods/GaN Heterojunction structure for Light-Emitting Diodes and photodetectors application

1D ZnO nanostructures have excellent photoelectric features. Some of the properties include sub-wavelength, multiple light confinement, and ultrahigh intrinsic photoelectric gain. The Zinc Oxide nanostructures do not have grain boundaries, they have a higher phase purity, and long-distance order than the polycrystalline thin films. These properties make them suitable transport carriers for advanced optoelectronic devices. Some of the nanowires' properties include light emission, strong optical absorption, and photoconductive gains. These properties help advance solar cells (LED), nanogenerators, sensors, and field-effect transistors' performance. The world is pursuing the use of affordable white lighting LEDs in the global energy crisis. This paper attempts to offer insight on the development of heterojunction LEDs using Zinc Oxide nanotubes and nanorods on the p-type GaN with a NiO buffer layer insertion to enhance the emission of light