Single ZnO Nanowire/p-type GaN Heterojunctions for Photovoltaic Devices and UV Light-Emitting Diodes
- Bie, Ya-Qing
- Liao, Zhi-Min
- Wang, Peng-Wei
- Zhou, Yong-Bo
- Han, Xiao-Bing
- Ye, Yu
- Zhao, Qing
- Wu, Xiao-Song
- Dai, Lun
- Xu, Jun
- Sang, Li-Wen
- Deng, Jun-Jing
- Laurent, K.
- Leprince-Wang, Y.
- Yu, Da-Peng
DOIAbstract
We fabricate heterojunctions consisting of a single n-type ZnO nanowire and a p-type GaN film. The photovoltaic effect of heterojunctions exhibits open-circuit voltages ranging from 2 to 2.7 V, and a maximum output power reaching 80 nW. Light-emitting diodes with UV electroluminescence based on the heterojunctions are demonstrated.Chemistry, MultidisciplinaryChemistry, PhysicalNanoscience & NanotechnologyMaterials Science, MultidisciplinaryPhysics, AppliedPhysics, Condensed MatterSCI(E)EIPubMed40ARTICLE384284-+2
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