The motion of an electron and its spin are generally not coupled. However in a one-dimensional material with strong spin-orbit interaction (SOI) a helical state may emerge at finite magnetic fields, where electrons of opposite spin will have opposite momentum. The existence of this helical state has applications for spin filtering and cooper pair splitter devices and is an essential ingredient for realizing topologically protected quantum computing using Majorana zero modes. Here, we report measurements of a quantum point contact in an indium antimonide nanowire. At magnetic fields exceeding 3 T, the 2 e 2/h conductance plateau shows a re-entrant feature toward 1 e 2/h which increases linearly in width with magnetic field. Rotating the magn...
A double quantum dot in the few-electron regime is achieved using local gating in an InSb nanowire. ...
A double quantum dot in the few-electron regime is achieved using local gating in an InSb nanowire. ...
A double quantum dot in the few-electron regime is achieved using local gating in an InSb nanowire. ...
The motion of an electron and its spin are generally not coupled. However in a one-dimensional mater...
The motion of an electron and its spin are generally not coupled. However in a one-dimensional mater...
The motion of an electron and its spin are generally not coupled. However in a one-dimensional mater...
The motion of an electron and its spin are generally not coupled. However in a one-dimensional mater...
The motion of an electron and its spin are generally not coupled. However in a one-dimensional mater...
International audienceThe motion of an electron and its spin are generally not coupled. However in a...
The motion of an electron and its spin are generally not coupled. However in a one-dimensional mater...
International audienceThe motion of an electron and its spin are generally not coupled. However in a...
We use magnetoconductance measurements in dual-gated InSb nanowire devices, together with a theoreti...
We use magnetoconductance measurements in dual-gated InSb nanowire devices, together with a theoreti...
We use magnetoconductance measurements in dual-gated InSb nanowire devices, together with a theoreti...
We use magnetoconductance measurements in dual-gated InSb nanowire devices, together with a theoreti...
A double quantum dot in the few-electron regime is achieved using local gating in an InSb nanowire. ...
A double quantum dot in the few-electron regime is achieved using local gating in an InSb nanowire. ...
A double quantum dot in the few-electron regime is achieved using local gating in an InSb nanowire. ...
The motion of an electron and its spin are generally not coupled. However in a one-dimensional mater...
The motion of an electron and its spin are generally not coupled. However in a one-dimensional mater...
The motion of an electron and its spin are generally not coupled. However in a one-dimensional mater...
The motion of an electron and its spin are generally not coupled. However in a one-dimensional mater...
The motion of an electron and its spin are generally not coupled. However in a one-dimensional mater...
International audienceThe motion of an electron and its spin are generally not coupled. However in a...
The motion of an electron and its spin are generally not coupled. However in a one-dimensional mater...
International audienceThe motion of an electron and its spin are generally not coupled. However in a...
We use magnetoconductance measurements in dual-gated InSb nanowire devices, together with a theoreti...
We use magnetoconductance measurements in dual-gated InSb nanowire devices, together with a theoreti...
We use magnetoconductance measurements in dual-gated InSb nanowire devices, together with a theoreti...
We use magnetoconductance measurements in dual-gated InSb nanowire devices, together with a theoreti...
A double quantum dot in the few-electron regime is achieved using local gating in an InSb nanowire. ...
A double quantum dot in the few-electron regime is achieved using local gating in an InSb nanowire. ...
A double quantum dot in the few-electron regime is achieved using local gating in an InSb nanowire. ...