Electron-paramagnetic-resonance (EPR) measurements were performed in the temperature range T=1.3–100 K in samples of the semimagnetic Pb1-x-ySnyMnxTe semiconductor with carrier concentrations p=1.6×1019-1.4×1021 cm-3. Magnetization and Hall effect were also measured. Compositions in the range 0.1
The influence of the concentration of charge carriers on the ferromagnetic phase transition of the s...
The influence of the concentration of charge carriers on the ferromagnetic phase transition of the s...
The influence of the concentration of charge carriers on the ferromagnetic phase transition of the s...
Electron-paramagnetic-resonance (EPR) measurements were performed in the temperature range T=1.3–100...
Electron-paramagnetic-resonance (EPR) measurements were performed in the temperature range T=1.3–100...
Electron-paramagnetic-resonance (EPR) measurements were performed in the temperature range T=1.3–100...
Electron-paramagnetic-resonance (EPR) measurements were performed in the temperature range T=1.3–100...
Electron-paramagnetic-resonance (EPR) measurements were performed in the temperature range T=1.3–100...
Electron paramagnetic resonance (EPR) was investigated in samples of the magnetically diluted semico...
Electron paramagnetic resonance (EPR) was investigated in samples of the magnetically diluted semico...
Electron paramagnetic resonance (EPR) was investigated in samples of the magnetically diluted semico...
Electron paramagnetic resonance (EPR) was investigated in samples of the magnetically diluted semico...
The effect of the carrier concentration induced shift of the g factor (the Knight shift) of the Mn2+...
The effect of the carrier concentration induced shift of the g factor (the Knight shift) of the Mn2+...
The influence of the concentration of charge carriers on the ferromagnetic phase transition of the s...
The influence of the concentration of charge carriers on the ferromagnetic phase transition of the s...
The influence of the concentration of charge carriers on the ferromagnetic phase transition of the s...
The influence of the concentration of charge carriers on the ferromagnetic phase transition of the s...
Electron-paramagnetic-resonance (EPR) measurements were performed in the temperature range T=1.3–100...
Electron-paramagnetic-resonance (EPR) measurements were performed in the temperature range T=1.3–100...
Electron-paramagnetic-resonance (EPR) measurements were performed in the temperature range T=1.3–100...
Electron-paramagnetic-resonance (EPR) measurements were performed in the temperature range T=1.3–100...
Electron-paramagnetic-resonance (EPR) measurements were performed in the temperature range T=1.3–100...
Electron paramagnetic resonance (EPR) was investigated in samples of the magnetically diluted semico...
Electron paramagnetic resonance (EPR) was investigated in samples of the magnetically diluted semico...
Electron paramagnetic resonance (EPR) was investigated in samples of the magnetically diluted semico...
Electron paramagnetic resonance (EPR) was investigated in samples of the magnetically diluted semico...
The effect of the carrier concentration induced shift of the g factor (the Knight shift) of the Mn2+...
The effect of the carrier concentration induced shift of the g factor (the Knight shift) of the Mn2+...
The influence of the concentration of charge carriers on the ferromagnetic phase transition of the s...
The influence of the concentration of charge carriers on the ferromagnetic phase transition of the s...
The influence of the concentration of charge carriers on the ferromagnetic phase transition of the s...
The influence of the concentration of charge carriers on the ferromagnetic phase transition of the s...