Optical and electronic properties of GaAs-based structures with columnar quantum dots

The electronic properties of a structure with columnar quantum dots obtained by close stacking of InAs submonolayers were studied by contactless electroreflectance (CER) and photoluminescence. These dots have an almost ideally rectangular cross section and uniform compn., which is promising for polarization independent gain. After energy level calcns. in the effective mass approxn. using compn. profiles obtained from cross-sectional TEM the part of the CER spectrum related to the 2-dimensional surrounding layer was explained and single heavy-hole-like and light-hole-like transitions related to the columnar dots identified, due to a single electron state confined in a shallow in-plane potential. [on SciFinder (R)