In this thesis results are described with the aim of examining the optoelectronic properties of InAs/GaAs columnar quantum-dots and comparing them with those of more conventional self-assembled quantum-dots. The polarisation properties of a set of columnar quantum-dot samples — of varied aspect ratio and In compositional contrast between the rod-shaped dot and the surrounding 2-D layer — are studied. For this investigation a new method to obtain the ratio of the fundamental TE/TM optical response using edge photo-absorption spectroscopy is proposed, which corrects for the polarisation-dependent features of the experimental set-up. The method is verified by application to compressive and tensile strained InGaP quantum well struct...
We present eight-band k.p calculations of the electronic and polarization properties of columnar Inz...
International audienceVertically stacked InAs/InP columnar quantum dots (CQDs) for polarization inse...
We report columnar quantum dots (CQDs) with extremely large aspect ratios, showing nearly polarizati...
In this thesis results are described with the aim of examining the optoelectronic properties of InAs...
Semiconductor optical amplifiers based on InGaAs columnar quantum dots (CQDs) with different numbers...
Semiconductor optical amplifiers based on InGaAs columnar quantum dots (CQDs) with different numbers...
The electronic properties of a structure with columnar quantum dots obtained by close stacking of In...
We report a systematic theoretical and experimental investigation of the polarization properties of ...
We report a systematic theoretical and experimental investigation of the polarization properties of ...
We present eight-band k.p calculations of the electronic and polarization properties of columnar Inz...
International audienceVertically stacked InAs/InP columnar quantum dots (CQDs) for polarization inse...
We report columnar quantum dots (CQDs) with extremely large aspect ratios, showing nearly polarizati...
In this thesis results are described with the aim of examining the optoelectronic properties of InAs...
Semiconductor optical amplifiers based on InGaAs columnar quantum dots (CQDs) with different numbers...
Semiconductor optical amplifiers based on InGaAs columnar quantum dots (CQDs) with different numbers...
The electronic properties of a structure with columnar quantum dots obtained by close stacking of In...
We report a systematic theoretical and experimental investigation of the polarization properties of ...
We report a systematic theoretical and experimental investigation of the polarization properties of ...
We present eight-band k.p calculations of the electronic and polarization properties of columnar Inz...
International audienceVertically stacked InAs/InP columnar quantum dots (CQDs) for polarization inse...
We report columnar quantum dots (CQDs) with extremely large aspect ratios, showing nearly polarizati...