An atomically resolved study of InGaAs quantum dot layers grown with an indium flush step

In this cross-sectional scanning tunnelling microscopy study we investigate the indium flush method as a means to control the height of self-assembled InGaAs quantum dots and wetting layers. The results show that application of an indium flush step during growth results in flattened dots and a reduced wetting layer of which the height can be precisely controlled by varying the height of the first capping layer. © 2010 IOP Publishing Ltd. U7 - Export Date: 2 August 2010 U7 - Source: Scopus U7 - Art. No.: 21570