Add to ORKGThis thesis presents a high-frequency noise model of MOS (Metal Oxide Semiconductor) devices. The high frequency (HF) noise model is based on the equivalent circuit of the MOS device, but it takes into account both the gate resistance distribution and hot carrier effect.Master of Engineerin
ABSTRACT Noise model for optically controlled MOSFET is developed, valid for frequency range upto 10...
The first radio frequency (RF) noise measurements on lateral nanowire metal-oxide-semiconductor fiel...
The rapid evolution of silicon MOSFET technology is fueled by a never-ending demand for better perfo...
This thesis presents a high-frequency noise model of MOS (Metal Oxide Semiconductor) devices. The hi...
A thorough study of high frequency MOSFET noise compact modeling with emphasis on channel thermal no...
At high frequency of gigahertz, the channel thermal noise is dominating the noise of MOSFETs. The ch...
The high-frequency behavior of electronic devices is of major interest in the field of research and ...
This thesis introduces a Monte Carlo simulation of intrinsic electronic noise in MOSFETs. Brief revi...
A new high frequency drain current noise model was developed for MOSFETs under sub-threshold conditi...
Theoretical thesis.Bibliography: pages 59-62.1. Introduction -- 2. Noise mechanism -- 3. Noise chara...
A new high frequency drain current noise model was developed for MOSFETs under sub-threshold conditi...
Abstract—In this paper, we present a simple analytical model for the thermal channel noise of deep-s...
We have developed a new simulation methodology for predicting shot noise intensity in Metal-Oxide-Se...
We have developed a new simulation methodology for predicting shot noise intensity in Metal-Oxide-Se...
The mechanisms causing the RF-noise in InGaAs metamorphic HEMTs and MOSFETs have been investigated a...
ABSTRACT Noise model for optically controlled MOSFET is developed, valid for frequency range upto 10...
The first radio frequency (RF) noise measurements on lateral nanowire metal-oxide-semiconductor fiel...
The rapid evolution of silicon MOSFET technology is fueled by a never-ending demand for better perfo...
This thesis presents a high-frequency noise model of MOS (Metal Oxide Semiconductor) devices. The hi...
A thorough study of high frequency MOSFET noise compact modeling with emphasis on channel thermal no...
At high frequency of gigahertz, the channel thermal noise is dominating the noise of MOSFETs. The ch...
The high-frequency behavior of electronic devices is of major interest in the field of research and ...
This thesis introduces a Monte Carlo simulation of intrinsic electronic noise in MOSFETs. Brief revi...
A new high frequency drain current noise model was developed for MOSFETs under sub-threshold conditi...
Theoretical thesis.Bibliography: pages 59-62.1. Introduction -- 2. Noise mechanism -- 3. Noise chara...
A new high frequency drain current noise model was developed for MOSFETs under sub-threshold conditi...
Abstract—In this paper, we present a simple analytical model for the thermal channel noise of deep-s...
We have developed a new simulation methodology for predicting shot noise intensity in Metal-Oxide-Se...
We have developed a new simulation methodology for predicting shot noise intensity in Metal-Oxide-Se...
The mechanisms causing the RF-noise in InGaAs metamorphic HEMTs and MOSFETs have been investigated a...
ABSTRACT Noise model for optically controlled MOSFET is developed, valid for frequency range upto 10...
The first radio frequency (RF) noise measurements on lateral nanowire metal-oxide-semiconductor fiel...
The rapid evolution of silicon MOSFET technology is fueled by a never-ending demand for better perfo...