Add to ORKGA new high frequency drain current noise model was developed for MOSFETs under sub-threshold condition. A simple parameter extraction technique is proposed, which utilizes Y-parameter analysis on the RF small-signal equivalent circuit. Good agreement has been obtained between the predicted and measured results up to 20 GHz.Published versio
In this paper, a new field dependent effective mobility model including the drain-induced vertical f...
This work summarizes the results of modeling and simulation of drain current low-frequency (1/f) noi...
measured and modeled. In contrast to some other groups, we find only a moderate enhancement of the d...
A new high frequency drain current noise model was developed for MOSFETs under sub-threshold conditi...
The design of the low-voltage low-power RF circuit has become increasingly grown in demand. The exis...
At high frequency of gigahertz, the channel thermal noise is dominating the noise of MOSFETs. The ch...
A thorough study of high frequency MOSFET noise compact modeling with emphasis on channel thermal no...
In this letter, a drain current noise model that includes the channel thermal noise and the shot noi...
In this letter, a drain current noise model that includes the channel thermal noise and the shot noi...
This thesis presents a high-frequency noise model of MOS (Metal Oxide Semiconductor) devices. The hi...
This thesis presents a high-frequency noise model of MOS (Metal Oxide Semiconductor) devices. The hi...
A simple high frequency channel thermal noise model was developed for MOSFETs in strong inversion r...
A closed-form model able to predict high frequency thermal noise of SOI MOSFETS for all channel leng...
In this paper, a novel procedure for extracting the impor-tant noise sources in MOSFETs is reviewed....
In this paper, a new field dependent effective mobility model including the drain-induced vertical f...
In this paper, a new field dependent effective mobility model including the drain-induced vertical f...
This work summarizes the results of modeling and simulation of drain current low-frequency (1/f) noi...
measured and modeled. In contrast to some other groups, we find only a moderate enhancement of the d...
A new high frequency drain current noise model was developed for MOSFETs under sub-threshold conditi...
The design of the low-voltage low-power RF circuit has become increasingly grown in demand. The exis...
At high frequency of gigahertz, the channel thermal noise is dominating the noise of MOSFETs. The ch...
A thorough study of high frequency MOSFET noise compact modeling with emphasis on channel thermal no...
In this letter, a drain current noise model that includes the channel thermal noise and the shot noi...
In this letter, a drain current noise model that includes the channel thermal noise and the shot noi...
This thesis presents a high-frequency noise model of MOS (Metal Oxide Semiconductor) devices. The hi...
This thesis presents a high-frequency noise model of MOS (Metal Oxide Semiconductor) devices. The hi...
A simple high frequency channel thermal noise model was developed for MOSFETs in strong inversion r...
A closed-form model able to predict high frequency thermal noise of SOI MOSFETS for all channel leng...
In this paper, a novel procedure for extracting the impor-tant noise sources in MOSFETs is reviewed....
In this paper, a new field dependent effective mobility model including the drain-induced vertical f...
In this paper, a new field dependent effective mobility model including the drain-induced vertical f...
This work summarizes the results of modeling and simulation of drain current low-frequency (1/f) noi...
measured and modeled. In contrast to some other groups, we find only a moderate enhancement of the d...