Atomic layer deposition (ALD) enables the conformal coating of porous materials, making the technique suitable for pore size tuning at the atomic level, e.g., for applications in catalysis, gas separation and sensing. It is, however, not straightforward to obtain information about the conformality of ALD coatings deposited in pores with diameters in the low mesoporous regime (< 10 nm). In this work, it is demonstrated that in situ synchrotron based grazing incidence small angle x-ray scattering (GISAXS) can provide valuable information on the change in density and internal surface area during ALD of TiO2 in a porous titania film with small mesopores (3-8 nm). The results are shown to be in good agreement with in situ x-ray fluorescence data...
Anisotropic deposition profiles of TiO2 in Zeotile-4 ordered mesoporous silica material are obtained...
Atomic layer deposition (ALD) is a thin-film growth method that is characterized by alternating expo...
When atomic layer deposition (ALD) is performed on a porous material by using an organometallic prec...
Atomic layer deposition (ALD) enables the conformal coating of porous materials, making the techniqu...
Selectivity is a critical attribute of catalysts used in manufacturing of essential and fine chemica...
Synchrotron-based X-ray fluorescence (XRF) is introduced as a promising in situ technique to monitor...
In this paper, we present an x-ray based approach for in situ characterization during ALD processes....
Atomic layer deposition (ALD) is a film growth technique to cover solid surfaces with ultrathin film...
Ellipsometric porosimetry (EP) is a handy technique to characterize the porosity and pore size distr...
Atomic layer deposition (ALD) is a self-limited growth method which relies on sequential reactions o...
Atomic layer deposition (ALD) is a cyclic process which relies on sequential self-terminating reacti...
Amorphous titanium dioxide was introduced into the pores of mesoporous silica thin films with 75% po...
This paper explores the effects of different plasma treatments on low dielectric constant (low-k) ma...
A strategy is presented to deposit defined layers of TiO2 onto the pore surface within ordered mesop...
Anisotropic deposition profiles of TiO2 in Zeotile-4 ordered mesoporous silica material are obtained...
Atomic layer deposition (ALD) is a thin-film growth method that is characterized by alternating expo...
When atomic layer deposition (ALD) is performed on a porous material by using an organometallic prec...
Atomic layer deposition (ALD) enables the conformal coating of porous materials, making the techniqu...
Selectivity is a critical attribute of catalysts used in manufacturing of essential and fine chemica...
Synchrotron-based X-ray fluorescence (XRF) is introduced as a promising in situ technique to monitor...
In this paper, we present an x-ray based approach for in situ characterization during ALD processes....
Atomic layer deposition (ALD) is a film growth technique to cover solid surfaces with ultrathin film...
Ellipsometric porosimetry (EP) is a handy technique to characterize the porosity and pore size distr...
Atomic layer deposition (ALD) is a self-limited growth method which relies on sequential reactions o...
Atomic layer deposition (ALD) is a cyclic process which relies on sequential self-terminating reacti...
Amorphous titanium dioxide was introduced into the pores of mesoporous silica thin films with 75% po...
This paper explores the effects of different plasma treatments on low dielectric constant (low-k) ma...
A strategy is presented to deposit defined layers of TiO2 onto the pore surface within ordered mesop...
Anisotropic deposition profiles of TiO2 in Zeotile-4 ordered mesoporous silica material are obtained...
Atomic layer deposition (ALD) is a thin-film growth method that is characterized by alternating expo...
When atomic layer deposition (ALD) is performed on a porous material by using an organometallic prec...