Anisotropic deposition profiles of TiO2 in Zeotile-4 ordered mesoporous silica material are obtained using Atomic Layer Deposition (ALD) involving alternating pulses of tetrakis(dimethylamino) titanium (TDMAT) and water. TiO2 concentration profiles visualized by transmission electron microscopy (TEM) on particle cross sections reveal the systematic deeper penetration of the deposition front along the main channels and the more limited penetration in the perpendicular direction through the narrower slit-like mesopores. In ordered mesoporous material with one-dimensional pore system ALD leads to pore plugging. Diffusion limited ALD is shown to be useful for TiO2 deposition in anisotropic mesoporous support materials
Atomic layer deposition (ALD) is a self-limited growth method which relies on sequential reactions o...
Atmospheric Pressure Spatial Atomic Layer Deposition (AP-SALD) is an upcoming deposition technique s...
International audienceAtomic layer deposition (ALD) of TiO2 thin films on a Si substrate has been in...
Anisotropic deposition profiles of TiO2 in Zeotile-4 ordered mesoporous silica material are obtained...
Anisotropic deposition profiles of TiO<sub>2</sub> in Zeotile-4 ordered mesoporous silica material a...
A strategy is presented to deposit defined layers of TiO2 onto the pore surface within ordered mesop...
Amorphous titanium dioxide was introduced into the pores of mesoporous silica thin films with 75% po...
Atomic layer deposition (ALD) is a film growth technique to cover solid surfaces with ultrathin film...
When atomic layer deposition (ALD) is performed on a porous material by using an organometallic prec...
Atomic layer deposition (ALD) represents a unique deposition technique that allows to coat uniformly...
Atomic layer deposition (ALD) enables the conformal coating of porous materials, making the techniqu...
Atomic Layer Deposition (ALD) is a an excellent technique for depositing conformal thin films on com...
Atomic layer deposition (ALD) represents a unique deposition technique that allows to coat uniformly...
Atomic Layer Deposition (ALD) is a an excellent technique for depositing conformal thin films on com...
International audienceTiO2 Atomic Layer Deposition (ALD) is used in microelectronics due to its abil...
Atomic layer deposition (ALD) is a self-limited growth method which relies on sequential reactions o...
Atmospheric Pressure Spatial Atomic Layer Deposition (AP-SALD) is an upcoming deposition technique s...
International audienceAtomic layer deposition (ALD) of TiO2 thin films on a Si substrate has been in...
Anisotropic deposition profiles of TiO2 in Zeotile-4 ordered mesoporous silica material are obtained...
Anisotropic deposition profiles of TiO<sub>2</sub> in Zeotile-4 ordered mesoporous silica material a...
A strategy is presented to deposit defined layers of TiO2 onto the pore surface within ordered mesop...
Amorphous titanium dioxide was introduced into the pores of mesoporous silica thin films with 75% po...
Atomic layer deposition (ALD) is a film growth technique to cover solid surfaces with ultrathin film...
When atomic layer deposition (ALD) is performed on a porous material by using an organometallic prec...
Atomic layer deposition (ALD) represents a unique deposition technique that allows to coat uniformly...
Atomic layer deposition (ALD) enables the conformal coating of porous materials, making the techniqu...
Atomic Layer Deposition (ALD) is a an excellent technique for depositing conformal thin films on com...
Atomic layer deposition (ALD) represents a unique deposition technique that allows to coat uniformly...
Atomic Layer Deposition (ALD) is a an excellent technique for depositing conformal thin films on com...
International audienceTiO2 Atomic Layer Deposition (ALD) is used in microelectronics due to its abil...
Atomic layer deposition (ALD) is a self-limited growth method which relies on sequential reactions o...
Atmospheric Pressure Spatial Atomic Layer Deposition (AP-SALD) is an upcoming deposition technique s...
International audienceAtomic layer deposition (ALD) of TiO2 thin films on a Si substrate has been in...