Rigorous electromagnetic field simulations are applied to investigate phase effects in the light diffraction from masks for advanced optical and extreme ultraviolet lithography. Analogies of these phase effects with wave aberrations of the projection lens and their impact on the lithographic process performance are discussed
It is now well established that extreme ultraviolet (EUV) mask multilayer roughness leads to wafer-p...
Mask topography contributes to phase at the wafer plane, even for OMOG binary masks currently in use...
ABSTRACT Thin mask approximations and Kirchhoff boundary conditions for imaging calculations are jus...
The mask plays a significant role as an active optical element in lithography, for both deep ultravi...
Projection lithography at wavelengths in the extreme ultraviolet spectral range between 5 and 20 nm ...
Both mask design and quality of the projection optics have a large impact on the performance of a ph...
Lithographic masks are an important and increasingly complex part of systems for advanced optical an...
This paper reviews state of the art mask modeling for optical lithography. Rigorous electromagnetic ...
Rigorous simulation of light diffraction from optical and EUV masks predicts phase effects with an a...
The mask plays a significant role as an active optical element in lithography, for both EUV and imme...
Both mask design and quality of the projection optics have a large impact on the performance of a ph...
The reflection and diffraction of extreme ultraviolet (EUV) light from lithographic masks and the pr...
Lithographic processes belong to the most critical steps in the fabrication of microelectronic circu...
The detailed understanding and accurate modeling of light diffraction from (sub-) wavelength size fe...
Optical extensions, laid out by Sematech and others, have implications for simulation, calling for n...
It is now well established that extreme ultraviolet (EUV) mask multilayer roughness leads to wafer-p...
Mask topography contributes to phase at the wafer plane, even for OMOG binary masks currently in use...
ABSTRACT Thin mask approximations and Kirchhoff boundary conditions for imaging calculations are jus...
The mask plays a significant role as an active optical element in lithography, for both deep ultravi...
Projection lithography at wavelengths in the extreme ultraviolet spectral range between 5 and 20 nm ...
Both mask design and quality of the projection optics have a large impact on the performance of a ph...
Lithographic masks are an important and increasingly complex part of systems for advanced optical an...
This paper reviews state of the art mask modeling for optical lithography. Rigorous electromagnetic ...
Rigorous simulation of light diffraction from optical and EUV masks predicts phase effects with an a...
The mask plays a significant role as an active optical element in lithography, for both EUV and imme...
Both mask design and quality of the projection optics have a large impact on the performance of a ph...
The reflection and diffraction of extreme ultraviolet (EUV) light from lithographic masks and the pr...
Lithographic processes belong to the most critical steps in the fabrication of microelectronic circu...
The detailed understanding and accurate modeling of light diffraction from (sub-) wavelength size fe...
Optical extensions, laid out by Sematech and others, have implications for simulation, calling for n...
It is now well established that extreme ultraviolet (EUV) mask multilayer roughness leads to wafer-p...
Mask topography contributes to phase at the wafer plane, even for OMOG binary masks currently in use...
ABSTRACT Thin mask approximations and Kirchhoff boundary conditions for imaging calculations are jus...
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