Both mask design and quality of the projection optics have a large impact on the performance of a phase shift mask (PSM). Topographic features on the reticle such as etched trenches in alternating PSM produce a spectrum of the diffracted light which differs from that one of an infinitely thin amplitude/phase object as it is assumed in standard imaging algorithms. Many authors have investigated the consequences of this phenomenon with respect to aberration free imaging. However, the diffraction of light from topographic features implies also a modified interaction between the mask and wave aberrations of the projector. Rigorous simulation of the light diffraction from the mask is combined with standard lithography imaging algorithms to explo...
The trend toward smaller feature sizes in microlithography requires not only a shift to shorter wave...
Optical extensions, laid out by Sematech and others, have implications for simulation, calling for n...
Two theories are developed to quantify image skew of photomask features caused by aberrations. In on...
Both mask design and quality of the projection optics have a large impact on the performance of a ph...
Each new technology node tests the limits of optical Lithography. As exposure wavelength is reduced,...
Rigorous electromagnetic field simulations are applied to investigate phase effects in the light dif...
ABSTRACT Thin mask approximations and Kirchhoff boundary conditions for imaging calculations are jus...
The aberration present in the lenses of exposure systems can cause placement errors to the images pr...
This paper describes mask topography effects of alternating phase shift masks for DUV lithography. F...
In this article, the imaging principles of projection steppers for optical lithography, using standa...
In this article, the imaging principles of projection steppers for optical lithography, using standa...
As device continues to shrink beyond the theoretical limit of the optical exposure tools, other opti...
In this article, the imaging principles of projection steppers for optical lithography, using standa...
As device continues to shrink beyond the theoretical limit of the optical exposure tools, other opti...
As a critical dimension shrinks, the degradation in image quality caused by wavefront aberrations of...
The trend toward smaller feature sizes in microlithography requires not only a shift to shorter wave...
Optical extensions, laid out by Sematech and others, have implications for simulation, calling for n...
Two theories are developed to quantify image skew of photomask features caused by aberrations. In on...
Both mask design and quality of the projection optics have a large impact on the performance of a ph...
Each new technology node tests the limits of optical Lithography. As exposure wavelength is reduced,...
Rigorous electromagnetic field simulations are applied to investigate phase effects in the light dif...
ABSTRACT Thin mask approximations and Kirchhoff boundary conditions for imaging calculations are jus...
The aberration present in the lenses of exposure systems can cause placement errors to the images pr...
This paper describes mask topography effects of alternating phase shift masks for DUV lithography. F...
In this article, the imaging principles of projection steppers for optical lithography, using standa...
In this article, the imaging principles of projection steppers for optical lithography, using standa...
As device continues to shrink beyond the theoretical limit of the optical exposure tools, other opti...
In this article, the imaging principles of projection steppers for optical lithography, using standa...
As device continues to shrink beyond the theoretical limit of the optical exposure tools, other opti...
As a critical dimension shrinks, the degradation in image quality caused by wavefront aberrations of...
The trend toward smaller feature sizes in microlithography requires not only a shift to shorter wave...
Optical extensions, laid out by Sematech and others, have implications for simulation, calling for n...
Two theories are developed to quantify image skew of photomask features caused by aberrations. In on...