Semiconductor nanowires (NWs) have the prospect of being employed as basic units for nanoscale devices and circuits. However, the impact of their one-dimensional geometry and peculiar crystal phase on transport and spin characteristics remains largely unknown. We determine the exciton reduced mass and gyromagnetic factor of (InGa)As NWs in the wurtzite phase by photoluminescence (PL) spectroscopy under very high magnetic fields. For 8 perpendicular to the NW (c) over cap axis, the exciton reduced mass is 10% greater than that expected for the zincblende phase and no field-induced circular polarization of PL is observed. For B parallel to an exciton reduced mass 35% greater than that of the zincblende phase is derived. Moreover, a circular d...
We use polarized photocurrent spectroscopy in a nanowire device to investigate the band structure of...
The formation of wurtzite (WZ) phase in III-V nanowires (NWs) such as GaAs and InP is a complication...
III-V compound semiconductor nanowires are generally characterized by the coexistence of zincblende ...
At ambient conditions, GaAs forms in the zincblende (ZB) phase with the notable exception of nanowir...
The knowledge of the value and anisotropy of the gyromagnetic factor in semiconducting nanowires (NW...
Thanks to their peculiar shape and dimensions, semiconductor nanowires (NWs) are emerging as buildin...
Crystal-phase engineering has emerged as a novel method of bandgap engineering, made feasible by the...
The possibility to grow in zincblende (ZB) and/or wurtzite (WZ) crystal phase widens the potential a...
The knowledge of the value and anisotropy of the gyromagnetic factor in semiconducting nanowires (NW...
At ambient conditions, GaAs forms in the zincblende (ZB) phase with the notable exception of nanow...
At ambient conditions, GaAs forms in the zincblende (ZB) phase with the notable exception of nanowir...
Thanks to their peculiar shape and dimensions, semiconductor nanowires (NWs) are emerging asbuilding...
Crystal-phase low-dimensional structures offer great potential for the implementation of photonic de...
Crystal-phase low-dimensional structures offer great potential for the implementation of photonic de...
We use polarized photocurrent spectroscopy in a nanowire device to investigate the band structure of...
We use polarized photocurrent spectroscopy in a nanowire device to investigate the band structure of...
The formation of wurtzite (WZ) phase in III-V nanowires (NWs) such as GaAs and InP is a complication...
III-V compound semiconductor nanowires are generally characterized by the coexistence of zincblende ...
At ambient conditions, GaAs forms in the zincblende (ZB) phase with the notable exception of nanowir...
The knowledge of the value and anisotropy of the gyromagnetic factor in semiconducting nanowires (NW...
Thanks to their peculiar shape and dimensions, semiconductor nanowires (NWs) are emerging as buildin...
Crystal-phase engineering has emerged as a novel method of bandgap engineering, made feasible by the...
The possibility to grow in zincblende (ZB) and/or wurtzite (WZ) crystal phase widens the potential a...
The knowledge of the value and anisotropy of the gyromagnetic factor in semiconducting nanowires (NW...
At ambient conditions, GaAs forms in the zincblende (ZB) phase with the notable exception of nanow...
At ambient conditions, GaAs forms in the zincblende (ZB) phase with the notable exception of nanowir...
Thanks to their peculiar shape and dimensions, semiconductor nanowires (NWs) are emerging asbuilding...
Crystal-phase low-dimensional structures offer great potential for the implementation of photonic de...
Crystal-phase low-dimensional structures offer great potential for the implementation of photonic de...
We use polarized photocurrent spectroscopy in a nanowire device to investigate the band structure of...
We use polarized photocurrent spectroscopy in a nanowire device to investigate the band structure of...
The formation of wurtzite (WZ) phase in III-V nanowires (NWs) such as GaAs and InP is a complication...
III-V compound semiconductor nanowires are generally characterized by the coexistence of zincblende ...