We use polarized photocurrent spectroscopy in a nanowire device to investigate the band structure of hexagonal Wurtzite InAs. Signatures of optical transitions between four valence bands and two conduction bands are observed which are consistent with the symmetries expected from group theory. The ground state transition energy identified from photocurrent spectra is seen to be consistent with photoluminescence emitted from a cluster of nanowires from the same growth substrate. From the energies of the observed bands we determine the spin orbit and crystal field energies in Wurtzite InAs. This information is vital to the development of crystal phase engineering of this important III-V semiconductor.We acknowledge the financial support of t...
Semiconductor nanowires based on non-nitride III-V compounds can be synthesized under certain growth...
Semiconductor nanowires based on non-nitride III-V compounds can be synthesized under certain growth...
Raw data from the figures in "Engineering the Photoresponse of InAs Nanowires". InAs nanowires were ...
We use polarized photocurrent spectroscopy in a nanowire device to investigate the band structure of...
Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)Coordenação de Aperfeiçoamento d...
We use time-resolved photoluminescence and photoluminescence excitation spectroscopy to obtain the v...
This thesis describes optical spectroscopy on III-V semiconductor nanowires. The nanowires were grow...
We investigated the optical properties of wurtzite (WZ) GaP nanowires by performing photoluminescenc...
Thanks to their peculiar shape and dimensions, semiconductor nanowires (NWs) are emerging as buildin...
Thanks to their peculiar shape and dimensions, semiconductor nanowires (NWs) are emerging asbuilding...
Semiconductor nanowires (NWs) have the prospect of being employed as basic units for nanoscale devic...
ii i This thesis will report on the optical characterization of wurtzite (WZ) InP. Recently it is po...
Photoluminescence (PL) as a conventional yet powerful optical spectroscopy may provide crucial insig...
We investigated the optical properties of wurtzite (WZ) GaP nanowires by performing photoluminescenc...
Raw data from the figures in "Engineering the Photoresponse of InAs Nanowires". InAs nanowires were ...
Semiconductor nanowires based on non-nitride III-V compounds can be synthesized under certain growth...
Semiconductor nanowires based on non-nitride III-V compounds can be synthesized under certain growth...
Raw data from the figures in "Engineering the Photoresponse of InAs Nanowires". InAs nanowires were ...
We use polarized photocurrent spectroscopy in a nanowire device to investigate the band structure of...
Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)Coordenação de Aperfeiçoamento d...
We use time-resolved photoluminescence and photoluminescence excitation spectroscopy to obtain the v...
This thesis describes optical spectroscopy on III-V semiconductor nanowires. The nanowires were grow...
We investigated the optical properties of wurtzite (WZ) GaP nanowires by performing photoluminescenc...
Thanks to their peculiar shape and dimensions, semiconductor nanowires (NWs) are emerging as buildin...
Thanks to their peculiar shape and dimensions, semiconductor nanowires (NWs) are emerging asbuilding...
Semiconductor nanowires (NWs) have the prospect of being employed as basic units for nanoscale devic...
ii i This thesis will report on the optical characterization of wurtzite (WZ) InP. Recently it is po...
Photoluminescence (PL) as a conventional yet powerful optical spectroscopy may provide crucial insig...
We investigated the optical properties of wurtzite (WZ) GaP nanowires by performing photoluminescenc...
Raw data from the figures in "Engineering the Photoresponse of InAs Nanowires". InAs nanowires were ...
Semiconductor nanowires based on non-nitride III-V compounds can be synthesized under certain growth...
Semiconductor nanowires based on non-nitride III-V compounds can be synthesized under certain growth...
Raw data from the figures in "Engineering the Photoresponse of InAs Nanowires". InAs nanowires were ...