Add to ORKGCathodoluminescence spectroscopy has been used for the first time in order to detect the base-dopant outdiffusion induced by current stress in AlGAs/GaAs Be-doped heterojunction bipolar transistors. The results show that diffusion of base dopant along the growth direction of the HBT structure occurs during the stress and this conclusion is confirmed by SIMS analysis. Integrated CL intensity variations induced by the stress suggest that the mechanism of recombination-enhanced impurity diffusion is responsible for diffusion of Be
The current gain instability of AlGaAs/GaAs heterojunction bipolar transistor (HBT) is investigated,...
Reliability of GaAs-based heterojunction bipolar transistor (HBT) is studied based on two-dimensiona...
The base and collector currents (I(B) and I(C)) of the pre- and post-burn-in Al-GaAs/GaAs heterojunc...
Cathodoluminescence spectroscopy has been used for the first time in order to detect the base-dopant...
In this study Cathodoluminescence spectroscopy has been used for the first time in order to detect t...
The impact of the base dopant lavel on the stability of Be-doped AlGaAs/GaAs HBTs is investigated by...
The major concern for reliability of Berillium doped HBTs is the diffusion of the base dopant toward...
This thesis presents detailed studies of several aspects of strain effects in semi-conductors and th...
AlGaAs/GaAs HBTs play a significant role in the market of wireless products. Using HBT devices fabri...
AlGaAs/GaAs Heterojunction Bipolar Transistors processed with an implanted technology require a Mg i...
This study reports on the microcharacterization of devices for optoelectronic and for microelectroni...
Triple mesa, Be-doped AlGaAs/GaAs HBTs were stressed at low temperature by forcing an emitter curren...
In high current and power density applications of AlGaAs/GaAs heterojunction bipolar transistors (HB...
Low temperature spectrally resolved Cathodoluminescence has been used to study the effects of electr...
The current gain instability of AlGaAs/GaAs heterojunction bipolar transistor (HBT) is investigated,...
The current gain instability of AlGaAs/GaAs heterojunction bipolar transistor (HBT) is investigated,...
Reliability of GaAs-based heterojunction bipolar transistor (HBT) is studied based on two-dimensiona...
The base and collector currents (I(B) and I(C)) of the pre- and post-burn-in Al-GaAs/GaAs heterojunc...
Cathodoluminescence spectroscopy has been used for the first time in order to detect the base-dopant...
In this study Cathodoluminescence spectroscopy has been used for the first time in order to detect t...
The impact of the base dopant lavel on the stability of Be-doped AlGaAs/GaAs HBTs is investigated by...
The major concern for reliability of Berillium doped HBTs is the diffusion of the base dopant toward...
This thesis presents detailed studies of several aspects of strain effects in semi-conductors and th...
AlGaAs/GaAs HBTs play a significant role in the market of wireless products. Using HBT devices fabri...
AlGaAs/GaAs Heterojunction Bipolar Transistors processed with an implanted technology require a Mg i...
This study reports on the microcharacterization of devices for optoelectronic and for microelectroni...
Triple mesa, Be-doped AlGaAs/GaAs HBTs were stressed at low temperature by forcing an emitter curren...
In high current and power density applications of AlGaAs/GaAs heterojunction bipolar transistors (HB...
Low temperature spectrally resolved Cathodoluminescence has been used to study the effects of electr...
The current gain instability of AlGaAs/GaAs heterojunction bipolar transistor (HBT) is investigated,...
The current gain instability of AlGaAs/GaAs heterojunction bipolar transistor (HBT) is investigated,...
Reliability of GaAs-based heterojunction bipolar transistor (HBT) is studied based on two-dimensiona...
The base and collector currents (I(B) and I(C)) of the pre- and post-burn-in Al-GaAs/GaAs heterojunc...