Add to ORKGThe electronic energy structure for the (111)ideal and relaxed surfaces of silicon is calculated by the chemical pseudopotential method. We use a minimal basis set of localized orbitals and an atomic-like crystal potential to compute the interaction parameters and include self-consistency. Results are compared with other more involved theoretical calculations with satisfactory agreement
The electronic structure of the arsenic terminated silicon (100) surface is calculated using the tig...
The electronic structure of the arsenic terminated silicon (100) surface is calculated using the tig...
The electronic states of a neutral vacancy in Si are studied through the chemical pseudopotential me...
The electronic energy structure for the (111)ideal and relaxed surfaces of silicon is calculated by ...
The objective of this thesis is to study the electronic structure, geometries and chemical binding c...
The objective of this thesis is to study the electronic structure, geometries and chemical binding c...
An empirical tight-binding (ETB) approach combined with a Green's-function (GF) method has been...
A self-consistent pseudopotential approach has been used to calculate the electronic structure of Ga...
A self-consistent pseudopotential approach has been used to calculate the electronic structure of Ga...
A simple analytic local pseudopotential has been suggested for silicon. This pseudopotential has fou...
The atomic geometry and the electronic structure of GaAs(110) and Si(111) with full coverage of chem...
The Si(111)2 × 1 surface has been widely studied via a range of different experimental and theoretic...
The chemical pseudopotential method has been used by a number of workers in order to study the valen...
The atomic geometry and the electronic structure of GaAs(110) and Si(111) with full coverage of chem...
The surface structures of the Si(113)-(1 X 1), Si(113)-(3 X 1) and Si(113)-(3 X 2) have been studied...
The electronic structure of the arsenic terminated silicon (100) surface is calculated using the tig...
The electronic structure of the arsenic terminated silicon (100) surface is calculated using the tig...
The electronic states of a neutral vacancy in Si are studied through the chemical pseudopotential me...
The electronic energy structure for the (111)ideal and relaxed surfaces of silicon is calculated by ...
The objective of this thesis is to study the electronic structure, geometries and chemical binding c...
The objective of this thesis is to study the electronic structure, geometries and chemical binding c...
An empirical tight-binding (ETB) approach combined with a Green's-function (GF) method has been...
A self-consistent pseudopotential approach has been used to calculate the electronic structure of Ga...
A self-consistent pseudopotential approach has been used to calculate the electronic structure of Ga...
A simple analytic local pseudopotential has been suggested for silicon. This pseudopotential has fou...
The atomic geometry and the electronic structure of GaAs(110) and Si(111) with full coverage of chem...
The Si(111)2 × 1 surface has been widely studied via a range of different experimental and theoretic...
The chemical pseudopotential method has been used by a number of workers in order to study the valen...
The atomic geometry and the electronic structure of GaAs(110) and Si(111) with full coverage of chem...
The surface structures of the Si(113)-(1 X 1), Si(113)-(3 X 1) and Si(113)-(3 X 2) have been studied...
The electronic structure of the arsenic terminated silicon (100) surface is calculated using the tig...
The electronic structure of the arsenic terminated silicon (100) surface is calculated using the tig...
The electronic states of a neutral vacancy in Si are studied through the chemical pseudopotential me...