A new technique for extracting the collector series resistance of bipolar transistors is presented. The method is based on impact-ionisation-induced base current reversal and provides the value which the collector resistance assumes in the forward active region of operation
A detailed study of base current reversal in silicon bipolar transitors and GaAs heterojunction bipo...
The current-dependent collector resistance of the bipolar transistor in quasi-saturation has been mo...
A comparison between two recently proposed DC methods for the extraction of base parasitic resistanc...
A new technique for extracting the collector series resistance of bipolar transistors is presented. ...
A new technique for extracting the collector series resistance of bipolar transistors is presented. ...
A new method for the evaluation of the dc base parasitic resistance of bipolar transistors is descri...
A new method for the evaluation of the dc base parasitic resistance, R(B), of bipolar transistors is...
We present a compact experimental technique for the extraction of all parasitic series resistances o...
A new dc technique for extracting parasitic base resistance, RB, of advanced bipolar transistors is ...
A new DC technique for extracting parasitic base resistance, RB, of advanced bipolar transistors is ...
In this paper we describe a set of measurements representing a complete characterization of impact-i...
In this paper we describe a set of measurements representing a complete characterization of impact-i...
The commonly used methods to measure series resistances in bipolar transistors including the open-co...
This paper presents an improved variant of a dc method to experimentally evaluate the base resistanc...
A detailed study of base current reversal in silicon bipolar transitors and GaAs heterojunction bipo...
A detailed study of base current reversal in silicon bipolar transitors and GaAs heterojunction bipo...
The current-dependent collector resistance of the bipolar transistor in quasi-saturation has been mo...
A comparison between two recently proposed DC methods for the extraction of base parasitic resistanc...
A new technique for extracting the collector series resistance of bipolar transistors is presented. ...
A new technique for extracting the collector series resistance of bipolar transistors is presented. ...
A new method for the evaluation of the dc base parasitic resistance of bipolar transistors is descri...
A new method for the evaluation of the dc base parasitic resistance, R(B), of bipolar transistors is...
We present a compact experimental technique for the extraction of all parasitic series resistances o...
A new dc technique for extracting parasitic base resistance, RB, of advanced bipolar transistors is ...
A new DC technique for extracting parasitic base resistance, RB, of advanced bipolar transistors is ...
In this paper we describe a set of measurements representing a complete characterization of impact-i...
In this paper we describe a set of measurements representing a complete characterization of impact-i...
The commonly used methods to measure series resistances in bipolar transistors including the open-co...
This paper presents an improved variant of a dc method to experimentally evaluate the base resistanc...
A detailed study of base current reversal in silicon bipolar transitors and GaAs heterojunction bipo...
A detailed study of base current reversal in silicon bipolar transitors and GaAs heterojunction bipo...
The current-dependent collector resistance of the bipolar transistor in quasi-saturation has been mo...
A comparison between two recently proposed DC methods for the extraction of base parasitic resistanc...
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