Terahertz intersubband transitions in the conduction band of Ge/SiGe multi quantum wells

Busby Y
Capellini G
Evangelisti F
Ortolani M
Virgilio M
Grosso G
Pizzi G
Nucara A
Lupi S
De Seta M

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Publication date

January 2010

DOI

10.1109/ICIMW.2010.5612749

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Abstract

We present intersubband absorption in the conduction band of compressively strained germanium quantum wells bounded by Ge-rich SiGe barriers. The measured absorption energies are in the 5-12 THz range depending on the well width. These results may be relevant for the design of SiGe-based THz Quantum Cascade emitters

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Terahertz intersubband transitions in the conduction band of Ge/SiGe multi quantum wells

Abstract

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Terahertz intersubband transitions in the conduction band of Ge/SiGe multi quantum wells

Abstract

Extracted data

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