Energy deposition by H and He ions at keV energies in self-supporting, single crystalline SiC foils

The specific energy deposition of H and He ions in SiC has been studied for both random and channeling orientations. The experiments were carried out in transmission geometry using the Time-of-Flight Medium Energy Ion Scattering System at the 350 keV Danfysik Implanter at Uppsala University. The target was a self-supporting, single crystalline cubic 3C-SiC (100) foil with nominal thickness of 200 nm. The measured stopping cross sections are compared with data available from the literature and theoretical predictions. The results for random geometries reveal slightly lower values than predicted by SRIM for H projectiles whereas for He projectiles good agreement was observed over the whole energy range studied. Higher specific energy loss is observed along random trajectories in comparison to channeling geometry, for all measured energies and for both H and He ions. For H ions, however, differences are minor, whereas for He ions, they are found generally more pronounced