In the present work, the energy spectra of protons channeled along the (0 0 0 1) axis of SiC polytype crystals (namely 4H and 6H) in the energy range E-P = 400-650 keV, in the backscattering geometry, were taken and analyzed. Computer simulations are in very good agreement with the measured spectra. The accurate reproduction of the experimental channeling spectra in the backscattering geometry is strongly based on the investigation of the correct dechanneling function and a, the ratio of the stopping powers in the aligned and random mode. In the present work, the applicability of a Gompertz type sigmoidal dechanneling function, with two parameters, k and x(c), which represent characteristic dechanneling rate and range, respectively, is exam...
The aim of this work is to define both the experimental procedures (random geometry and maximum beam...
Channeling in a short bent siliconcrystal was investigated at the CERN SPS using 400-GeV/c protons w...
Deflection of 400 GeV/c protons by a short bent silicon crystal was studied at the CERN SPS. It was ...
In the present work, the energy spectra of protons channeled along the (0 0 0 1) axis of SiC polytyp...
Energy spectra of protons channeling along the (0001) axis of several SiC polytype crystals (namely ...
In this work the energy dependences of the Gompertz type sigmoidal dechanneling function parameters ...
In this work the energy dependences of the Gompertz type sigmoidal dechanneling function parameters ...
In the present work; the dechanneling of protons in Si [110] is studied combining theoretical Monte-...
In the present work; the dechanneling of protons in Si [110] is studied combining theoretical Monte-...
Abstract. In the present work, the dechanneling of protons in Si [110] is studied combining theoreti...
We have observed the proton spectra from equal-velocity beams of H+, H2+, and H3+ incident on aligne...
The hexagonal silicon carbide (6H-SiC) is one of materials used in nuclear applications, and as such...
AbstractChanneling in a short bent silicon crystal was investigated at the CERN SPS using 400-GeV/c ...
The specific energy deposition of H and He ions in SiC has been studied for both random and channeli...
In the present work, elastic backscattering channeling spectra, EBS/C, of protons in a (100) diamond...
The aim of this work is to define both the experimental procedures (random geometry and maximum beam...
Channeling in a short bent siliconcrystal was investigated at the CERN SPS using 400-GeV/c protons w...
Deflection of 400 GeV/c protons by a short bent silicon crystal was studied at the CERN SPS. It was ...
In the present work, the energy spectra of protons channeled along the (0 0 0 1) axis of SiC polytyp...
Energy spectra of protons channeling along the (0001) axis of several SiC polytype crystals (namely ...
In this work the energy dependences of the Gompertz type sigmoidal dechanneling function parameters ...
In this work the energy dependences of the Gompertz type sigmoidal dechanneling function parameters ...
In the present work; the dechanneling of protons in Si [110] is studied combining theoretical Monte-...
In the present work; the dechanneling of protons in Si [110] is studied combining theoretical Monte-...
Abstract. In the present work, the dechanneling of protons in Si [110] is studied combining theoreti...
We have observed the proton spectra from equal-velocity beams of H+, H2+, and H3+ incident on aligne...
The hexagonal silicon carbide (6H-SiC) is one of materials used in nuclear applications, and as such...
AbstractChanneling in a short bent silicon crystal was investigated at the CERN SPS using 400-GeV/c ...
The specific energy deposition of H and He ions in SiC has been studied for both random and channeli...
In the present work, elastic backscattering channeling spectra, EBS/C, of protons in a (100) diamond...
The aim of this work is to define both the experimental procedures (random geometry and maximum beam...
Channeling in a short bent siliconcrystal was investigated at the CERN SPS using 400-GeV/c protons w...
Deflection of 400 GeV/c protons by a short bent silicon crystal was studied at the CERN SPS. It was ...