High-performance inorganic metal halide perovskite transistors

The p-type characteristic of solution-processed metal halide perovskite transistors means that they could be used in combination with their n-type counterparts, such as indium-gallium-zinc-oxide transistors, to create complementary metal-oxide-semiconductor-like circuits. However, the performance and stability of perovskite-based transistors do not yet match their n-type counterparts, which limit their broader application. Here we report high-performance p-channel perovskite thin-film transistors based on inorganic caesium tin triiodide semiconducting layers that have moderate hole concentrations and high Hall mobilities. The perovskite channels are formed by engineering the film composition and crystallization process using a tin-fluoride-modified caesium-iodide-rich precursor with lead substitution. The optimized transistors exhibit field-effect hole mobilities of over 50 cm(2) V-1 s(-1) and on/off current ratios exceeding 10(8), as well as high operational stability and reproducibility. By optimizing the doping and crystallization behaviour of solution-processed metal halide perovskite thin films, p-channel transistors with mobilities of 50 cm(2) V-1 s(-1) and on/off ratios of 10(8) can be fabricated.Funding Agencies|Ministry of Science and ICT through the National Research Foundation - Korean government [2021R1A2C3005401, 2020R1A4A1019455, 2020M3F3A2A01085792, 2020M3D1A1110548, 2020R1A2C4001617]; Samsung Display CorporationSamsung