It is well known that intense synchrotron beams can alter the state of materials, but this effect is generally considered undesired radiation damage. The effect of local irradiation of TiO2 rutile single crystals is investigated by a 56 × 57 nm2 synchrotron X‐ray nanobeam at 17.4 keV. Aside from a transient increase of conductivity due to a photovoltaic‐like process, a nonvolatile localized change of resistance by about 4 orders of magnitude is measured after X‐ray exposure. This effect can be ascribed to the local generation of oxygen vacancies by the X‐ray nanoprobe, which are subsequently ordered by the electric field applied during the acquisition of I–V curves. These results demonstrate that intense synchrotron beams can create oxygen ...
Recently, attention has been paid to surface plasmon waves occurring at an interface as responsible ...
Electron stimulated modifications of the rutile TiO2(110) surface have been investigated using scann...
The competition between itineracy and localization of electrons doped into the near-surface region o...
The possibility to directly write electrically conducting channels in a desired position in rutile T...
The resistive switching effect in transition metal oxides allows for a dedicated manipulation of the...
The resistive switching effect in transition metal oxides allows for a dedicated manipulation of the...
The interaction between X-rays and matter is an intriguing topic for both fundamental science and po...
The resistive switching effect in transition metal oxides allows for a dedicated manipulat...
The resistive switching effect in transition metal oxides allows for a dedicated manipulation of the...
Hydrothermally grown rutile TiO2 nanowires are intrinsically full of lattice defects, especially oxy...
Hydrothermally grown rutile TiO2 nanowires are intrinsically full of lattice defects, especially oxy...
Hydrothermally grown rutile TiO2 nanowires are intrinsically full of lattice defects, especially oxy...
Hydrothermally grown rutile TiO2 nanowires are intrinsically full of lattice defects, especially oxy...
Hydrothermally grown rutile TiO2 nanowires are intrinsically full of lattice defects, especially oxy...
We present results of the influence of infrared radiation on metal–TiO2–metal junctions where the met...
Recently, attention has been paid to surface plasmon waves occurring at an interface as responsible ...
Electron stimulated modifications of the rutile TiO2(110) surface have been investigated using scann...
The competition between itineracy and localization of electrons doped into the near-surface region o...
The possibility to directly write electrically conducting channels in a desired position in rutile T...
The resistive switching effect in transition metal oxides allows for a dedicated manipulation of the...
The resistive switching effect in transition metal oxides allows for a dedicated manipulation of the...
The interaction between X-rays and matter is an intriguing topic for both fundamental science and po...
The resistive switching effect in transition metal oxides allows for a dedicated manipulat...
The resistive switching effect in transition metal oxides allows for a dedicated manipulation of the...
Hydrothermally grown rutile TiO2 nanowires are intrinsically full of lattice defects, especially oxy...
Hydrothermally grown rutile TiO2 nanowires are intrinsically full of lattice defects, especially oxy...
Hydrothermally grown rutile TiO2 nanowires are intrinsically full of lattice defects, especially oxy...
Hydrothermally grown rutile TiO2 nanowires are intrinsically full of lattice defects, especially oxy...
Hydrothermally grown rutile TiO2 nanowires are intrinsically full of lattice defects, especially oxy...
We present results of the influence of infrared radiation on metal–TiO2–metal junctions where the met...
Recently, attention has been paid to surface plasmon waves occurring at an interface as responsible ...
Electron stimulated modifications of the rutile TiO2(110) surface have been investigated using scann...
The competition between itineracy and localization of electrons doped into the near-surface region o...