The resistive switching effect in transition metal oxides allows for a dedicated manipulation of the oxide resistance via electrical stimuli. Here, we perform local-conductivity atomic force microscopy simultaneously with the Kelvin probe force microscopy under ultra-high vacuum conditions using the very same tip investigating the very same sample area to monitor the surface conductivity and surface potential of thermally reduced TiO2 single crystals. We show that the resistance of confined surface areas can be switched by applying a voltage of several volts to the tip during scanning in the contact mode. By conducting in situ oxidation experiments, we present that this surface switching is related to a local redox reaction, which can be co...
It is well known that intense synchrotron beams can alter the state of materials, but this effect is...
Nanoscale metal/oxide/metal switches have the potential to transform the market for nonvolatile memo...
Nanoscale metal/oxide/metal switches have the potential to transform the market for nonvolatile memo...
The resistive switching effect in transition metal oxides allows for a dedicated manipulat...
The resistive switching effect in transition metal oxides allows for a dedicated manipulation of the...
The resistive switching effect in transition metal oxides allows for a dedicated manipulation of the...
The introduction of transition metal oxides for building nanodevices in information technology promi...
The introduction of transition metal oxides for building nanodevices in information technology promi...
Resistive switching of thermally treated rutile single crystals with (110) orientation is studied. A...
We report a direct observation of the microscopic origin of the bipolar resistive switching behavior...
Resistively switching devices are considered promising for next-generation nonvolatile random-access...
The quest for a non-volatile, small and fast computer memory calls for new memory concepts. Resistiv...
In this work we present a Conducting Atomic Force Microscopy (CAFM) study of TiO2 thin films that di...
Creation of nanometer-scale conductive filaments in resistive switching devices makes them appealing...
Conducting atomic force microscopy (C-AFM) is used to visualize the heterogeneous electronic conduct...
It is well known that intense synchrotron beams can alter the state of materials, but this effect is...
Nanoscale metal/oxide/metal switches have the potential to transform the market for nonvolatile memo...
Nanoscale metal/oxide/metal switches have the potential to transform the market for nonvolatile memo...
The resistive switching effect in transition metal oxides allows for a dedicated manipulat...
The resistive switching effect in transition metal oxides allows for a dedicated manipulation of the...
The resistive switching effect in transition metal oxides allows for a dedicated manipulation of the...
The introduction of transition metal oxides for building nanodevices in information technology promi...
The introduction of transition metal oxides for building nanodevices in information technology promi...
Resistive switching of thermally treated rutile single crystals with (110) orientation is studied. A...
We report a direct observation of the microscopic origin of the bipolar resistive switching behavior...
Resistively switching devices are considered promising for next-generation nonvolatile random-access...
The quest for a non-volatile, small and fast computer memory calls for new memory concepts. Resistiv...
In this work we present a Conducting Atomic Force Microscopy (CAFM) study of TiO2 thin films that di...
Creation of nanometer-scale conductive filaments in resistive switching devices makes them appealing...
Conducting atomic force microscopy (C-AFM) is used to visualize the heterogeneous electronic conduct...
It is well known that intense synchrotron beams can alter the state of materials, but this effect is...
Nanoscale metal/oxide/metal switches have the potential to transform the market for nonvolatile memo...
Nanoscale metal/oxide/metal switches have the potential to transform the market for nonvolatile memo...