Laser-induced damage threshold of sapphire in nanosecond, picosecond and femtosecond regimes
- Uteza, O.
- Bussiere, Benoît
- Canova, F.
- Chambaret, J.-P.
- Delaporte, Philippe
- Itina, Tatiana
- Sentis, Marc
DOIAbstract
International audienceThe surface laser-induced damage threshold fluence of sapphire is determined under various experimental conditions concerning the material irradiation (femtosecond, picosecond and nanosecond temporal regimes) and preparation (surface state). The results are of interest for optimising laser micromachining processes and for robust operation of high-peak power femtosecond Ti:sapphire laser chains
Add to ORKG