International audienceMagnetic properties of Mn5Ge3C0.7 thin films grown by molecular beam epitaxy have been studied. SQUID-VSM measurements and magnetic force microscopy have been used to probe the magnetic state and determine the relevant magnetic parameters. The results are supported by a combination of improved Saito's and Kittel's models. The moderate perpendicular magnetic anisotropy (Q(exp) - 2K(u)/mu M-0(Sat)2 approximate to 0:2) leads to a stripe domain structure for film thicknesses above 28 nm. For thinner films, the magnetization lies in-plane. The uniaxial magnetocrystalline constant has been found to be much weaker than in Mn5Ge3 and is assigned to hybridization effect between the Mn and C atoms
International audience2 X-band ferromagnetic resonance (FMR) was used to investigate static and dyna...
High crystalline quality Mn 5 Ge 3 films with thicknesses ranging 4–200 nm have been grown on Ge(111...
High crystalline quality Mn 5 Ge 3 films with thicknesses ranging 4–200 nm have been grown on Ge(111...
International audienceMagnetic properties of Mn5Ge3C0.7 thin films grown by molecular beam epitaxy h...
International audienceMagnetic properties of Mn5Ge3C0.7 thin films grown by molecular beam epitaxy h...
International audienceMagnetic properties of Mn5Ge3C0.7 thin films grown by molecular beam epitaxy h...
International audienceMagnetic properties of Mn5Ge3C0.7 thin films grown by molecular beam epitaxy h...
High crystalline quality Mn 5 Ge 3 films with thicknesses ranging 4–200 nm have been grown on Ge(111...
International audience2 X-band ferromagnetic resonance (FMR) was used to investigate static and dyna...
International audience2 X-band ferromagnetic resonance (FMR) was used to investigate static and dyna...
International audienceWe present a comprehensive study of magnetization reversal process in thin fil...
International audienceWe present a comprehensive study of magnetization reversal process in thin fil...
International audienceWe present a comprehensive study of magnetization reversal process in thin fil...
International audienceWe present a comprehensive study of magnetization reversal process in thin fil...
International audienceWe present a comprehensive study of magnetization reversal process in thin fil...
International audience2 X-band ferromagnetic resonance (FMR) was used to investigate static and dyna...
High crystalline quality Mn 5 Ge 3 films with thicknesses ranging 4–200 nm have been grown on Ge(111...
High crystalline quality Mn 5 Ge 3 films with thicknesses ranging 4–200 nm have been grown on Ge(111...
International audienceMagnetic properties of Mn5Ge3C0.7 thin films grown by molecular beam epitaxy h...
International audienceMagnetic properties of Mn5Ge3C0.7 thin films grown by molecular beam epitaxy h...
International audienceMagnetic properties of Mn5Ge3C0.7 thin films grown by molecular beam epitaxy h...
International audienceMagnetic properties of Mn5Ge3C0.7 thin films grown by molecular beam epitaxy h...
High crystalline quality Mn 5 Ge 3 films with thicknesses ranging 4–200 nm have been grown on Ge(111...
International audience2 X-band ferromagnetic resonance (FMR) was used to investigate static and dyna...
International audience2 X-band ferromagnetic resonance (FMR) was used to investigate static and dyna...
International audienceWe present a comprehensive study of magnetization reversal process in thin fil...
International audienceWe present a comprehensive study of magnetization reversal process in thin fil...
International audienceWe present a comprehensive study of magnetization reversal process in thin fil...
International audienceWe present a comprehensive study of magnetization reversal process in thin fil...
International audienceWe present a comprehensive study of magnetization reversal process in thin fil...
International audience2 X-band ferromagnetic resonance (FMR) was used to investigate static and dyna...
High crystalline quality Mn 5 Ge 3 films with thicknesses ranging 4–200 nm have been grown on Ge(111...
High crystalline quality Mn 5 Ge 3 films with thicknesses ranging 4–200 nm have been grown on Ge(111...