We report on transport experiments through high-mobility gate-tunable undoped InSb quantum wells (QWs). Due to the elimination of any Si modulation doping, the gate-defined two-dimensional electron gases in the QWs display a significantly increased mobility of 260000cm2/Vs at a rather low density of 2.4×1011cm-2. Using magnetotransport experiments, we characterize spin-orbit interactions by measuring weak antilocalization. Furthermore, by measuring Shubnikov-de Haas oscillations in tilted magnetic fields, we find that the g factor agrees with k·p theory calculations at low magnetic fields but grows with spin polarization and carrier density at high magnetic fields. Additionally, signatures of Ising quantum Hall ferromagnetism are found at f...
The inherent large spin-orbit (SO) coupling InSb quantum wells (QWs) is expected to result in sensit...
The inherent large spin-orbit (SO) coupling InSb quantum wells (QWs) is expected to result in sensit...
Gate-tunable high-mobility InSb/In1?xAlxSb quantum wells (QWs) grown on GaAs substrates are reported...
We report on transport characteristics of field effect two-dimensional electron gases in surface ind...
High mobility InSb quantum wells with tunable carrier densities are investigated by transport experi...
InSb has the lowest bulk electron effective mass and the narrowest band gap of the III-V semiconduct...
We report magnetotransport measurements on high-mobility two-dimensional electron systems (2DESs) c...
We present high field magneto-transport data from a range of 30nm wide InSb/InAlSb quantum wells. Th...
We present high field magneto-transport data from a range of 30nm wide InSb/InAlSb quantum wells. Th...
The inherent large spin-orbit (SO) coupling InSb quantum wells (QWs) is expected to result in sensit...
We present high field magneto-transport data from a range of 30nm wide InSb/InAlSb quantum wells. Th...
We present high field magneto-transport data from a range of 30nm wide InSb/InAlSb quantum wells. Th...
The inherent large spin-orbit (SO) coupling InSb quantum wells (QWs) is expected to result in sensit...
The inherent large spin-orbit (SO) coupling InSb quantum wells (QWs) is expected to result in sensit...
Gate-tunable high-mobility InSb/In1?xAlxSb quantum wells (QWs) grown on GaAs substrates are reported...
The inherent large spin-orbit (SO) coupling InSb quantum wells (QWs) is expected to result in sensit...
The inherent large spin-orbit (SO) coupling InSb quantum wells (QWs) is expected to result in sensit...
Gate-tunable high-mobility InSb/In1?xAlxSb quantum wells (QWs) grown on GaAs substrates are reported...
We report on transport characteristics of field effect two-dimensional electron gases in surface ind...
High mobility InSb quantum wells with tunable carrier densities are investigated by transport experi...
InSb has the lowest bulk electron effective mass and the narrowest band gap of the III-V semiconduct...
We report magnetotransport measurements on high-mobility two-dimensional electron systems (2DESs) c...
We present high field magneto-transport data from a range of 30nm wide InSb/InAlSb quantum wells. Th...
We present high field magneto-transport data from a range of 30nm wide InSb/InAlSb quantum wells. Th...
The inherent large spin-orbit (SO) coupling InSb quantum wells (QWs) is expected to result in sensit...
We present high field magneto-transport data from a range of 30nm wide InSb/InAlSb quantum wells. Th...
We present high field magneto-transport data from a range of 30nm wide InSb/InAlSb quantum wells. Th...
The inherent large spin-orbit (SO) coupling InSb quantum wells (QWs) is expected to result in sensit...
The inherent large spin-orbit (SO) coupling InSb quantum wells (QWs) is expected to result in sensit...
Gate-tunable high-mobility InSb/In1?xAlxSb quantum wells (QWs) grown on GaAs substrates are reported...
The inherent large spin-orbit (SO) coupling InSb quantum wells (QWs) is expected to result in sensit...
The inherent large spin-orbit (SO) coupling InSb quantum wells (QWs) is expected to result in sensit...
Gate-tunable high-mobility InSb/In1?xAlxSb quantum wells (QWs) grown on GaAs substrates are reported...