Add to ORKGGate-tunable high-mobility InSb/In1?xAlxSb quantum wells (QWs) grown on GaAs substrates are reported. The QW two-dimensional electron gas (2DEG) channel mobility in excess of 200?000?cm2/V?s is measured at T?=?1.8?K. In asymmetrically remote-doped samples with an HfO2 gate dielectric formed by atomic layer deposition, parallel conduction is eliminated and complete 2DEG channel depletion is reached with minimal hysteresis in gate bias response of the 2DEG electron density. The integer quantum Hall effect with Landau level filling factor down to 1 is observed. A high-transparency non-alloyed Ohmic contact to the 2DEG with contact resistance below 1 ?·mm is achieved at 1.8?K
Low- and high-field magnetotransport measurements on two 30 nm δ-doped InSb/AlInSb quantum wells (QW...
Modulation-doped GaAs-AlGaAs quantum-well-based structures are usually used to achieve very high mob...
InSb has the lowest bulk electron effective mass and the narrowest band gap of the III-V semiconduct...
Gate-tunable high-mobility InSb/In1?xAlxSb quantum wells (QWs) grown on GaAs substrates are reported...
We report on transport experiments through high-mobility gate-tunable undoped InSb quantum wells (QW...
Low- and high-field magnetotransport measurements on 30 nm δ-doped InSb/AlInSb quantum wells with di...
Low- and high-field magnetotransport measurements on 30 nm δ-doped InSb/AlInSb quantum wells with di...
Low- and high-field magnetotransport measurements on 30 nm δ-doped InSb/AlInSb quantum wells with di...
Low- and high-field magnetotransport measurements on 30 nm δ-doped InSb/AlInSb quantum wells with di...
We report on transport characteristics of field effect two-dimensional electron gases in surface ind...
Low- and high-field magnetotransport measurements on two 30 nm δ-doped InSb/AlInSb quantum wells (QW...
InSb/AlxIn1-xSb heterostructures display intrinsic parallel conduction in the buffer layer at room t...
Low- and high-field magnetotransport measurements on two 30 nm δ-doped InSb/AlInSb quantum wells (QW...
Low- and high-field magnetotransport measurements on two 30 nm δ-doped InSb/AlInSb quantum wells (QW...
Low- and high-field magnetotransport measurements on two 30 nm δ-doped InSb/AlInSb quantum wells (QW...
Low- and high-field magnetotransport measurements on two 30 nm δ-doped InSb/AlInSb quantum wells (QW...
Modulation-doped GaAs-AlGaAs quantum-well-based structures are usually used to achieve very high mob...
InSb has the lowest bulk electron effective mass and the narrowest band gap of the III-V semiconduct...
Gate-tunable high-mobility InSb/In1?xAlxSb quantum wells (QWs) grown on GaAs substrates are reported...
We report on transport experiments through high-mobility gate-tunable undoped InSb quantum wells (QW...
Low- and high-field magnetotransport measurements on 30 nm δ-doped InSb/AlInSb quantum wells with di...
Low- and high-field magnetotransport measurements on 30 nm δ-doped InSb/AlInSb quantum wells with di...
Low- and high-field magnetotransport measurements on 30 nm δ-doped InSb/AlInSb quantum wells with di...
Low- and high-field magnetotransport measurements on 30 nm δ-doped InSb/AlInSb quantum wells with di...
We report on transport characteristics of field effect two-dimensional electron gases in surface ind...
Low- and high-field magnetotransport measurements on two 30 nm δ-doped InSb/AlInSb quantum wells (QW...
InSb/AlxIn1-xSb heterostructures display intrinsic parallel conduction in the buffer layer at room t...
Low- and high-field magnetotransport measurements on two 30 nm δ-doped InSb/AlInSb quantum wells (QW...
Low- and high-field magnetotransport measurements on two 30 nm δ-doped InSb/AlInSb quantum wells (QW...
Low- and high-field magnetotransport measurements on two 30 nm δ-doped InSb/AlInSb quantum wells (QW...
Low- and high-field magnetotransport measurements on two 30 nm δ-doped InSb/AlInSb quantum wells (QW...
Modulation-doped GaAs-AlGaAs quantum-well-based structures are usually used to achieve very high mob...
InSb has the lowest bulk electron effective mass and the narrowest band gap of the III-V semiconduct...