Add to ORKGResistive random access memory is primarily composed of a two-terminal structure using metal electrodes and transition-metal oxides. An external bias sweep for the devices enables the observation of resistance switching behaviors: a reversible change between high resistance state and low resistance state. To illuminate the details for the fundamental mechanism, we investigated a redox effect of Pt electrodes in Pt/SrTiO_3 Schottky junctions and found that electronic states concerning an oxygen impurity in the vicinity of the interfaces play a critical role in the resistive switching
We report that electrode engineering, particularly tailoring the metal work function, measurement co...
To overcome the physical limits of todays memory technologies new concepts are needed. The resistive...
In conventional semiconductor theory, greater doping decreases the electronic resistance of a semico...
Resistive random access memory is primarily composed of a two-terminal structure using metal electro...
Oxide-based resistive switching devices are promising candidates for new memory and computing techno...
Resistive-switching devices can be toggled between a low resistive state and a high resistive state....
Nanoscale redox reactions in transition metal oxides are believed to be the physical foundation of m...
In this study, we investigated the resistive switching (RS) behavior of Pt/Nb-doped SrTiO3 (Pt/Nb:ST...
In conventional semiconductor theory, greater doping decreases the electronic resistance of a semico...
The presented study considers the electronic conduction across a SrTiO3/Pt Schottky electrode in a r...
We have demonstrated that the resistance switching (RS) effect can be controlled by the modification...
The current transport properties and resistance-switching (RS) behavior at platinum/niobium-doped st...
Underlying mechanism of metal-oxide-metal resistive switching device has been of long research inter...
Underlying mechanism of metal-oxide-metal resistive switching device has been of long research inter...
We report that electrode engineering, particularly tailoring the metal work function, measurement co...
We report that electrode engineering, particularly tailoring the metal work function, measurement co...
To overcome the physical limits of todays memory technologies new concepts are needed. The resistive...
In conventional semiconductor theory, greater doping decreases the electronic resistance of a semico...
Resistive random access memory is primarily composed of a two-terminal structure using metal electro...
Oxide-based resistive switching devices are promising candidates for new memory and computing techno...
Resistive-switching devices can be toggled between a low resistive state and a high resistive state....
Nanoscale redox reactions in transition metal oxides are believed to be the physical foundation of m...
In this study, we investigated the resistive switching (RS) behavior of Pt/Nb-doped SrTiO3 (Pt/Nb:ST...
In conventional semiconductor theory, greater doping decreases the electronic resistance of a semico...
The presented study considers the electronic conduction across a SrTiO3/Pt Schottky electrode in a r...
We have demonstrated that the resistance switching (RS) effect can be controlled by the modification...
The current transport properties and resistance-switching (RS) behavior at platinum/niobium-doped st...
Underlying mechanism of metal-oxide-metal resistive switching device has been of long research inter...
Underlying mechanism of metal-oxide-metal resistive switching device has been of long research inter...
We report that electrode engineering, particularly tailoring the metal work function, measurement co...
We report that electrode engineering, particularly tailoring the metal work function, measurement co...
To overcome the physical limits of todays memory technologies new concepts are needed. The resistive...
In conventional semiconductor theory, greater doping decreases the electronic resistance of a semico...