Light-intensity dependence of the staebler-wronski effect in a-Si:H with various densities of defects

金沢大学理工研究域電子情報通信学系The light-intensity dependence of the photocreation of dangling bonds (DBs) were investigated for a-Si:H films with increasing density of defects before light soaking. Samples in which the density of neutral DBs had been increased by annealing at 400 C for 1 h exhibited a weak light-intensity dependence of the photocreated DBs compared to that for the as-deposited sample. Furthermore, the sample which had been illuminated with a light intensity of 1 W/cm 2 for 1 h also showed a weak dependence. The results can be qualitatively explained by using rate equations for the densities of DBs and floating bonds (FBs) based on the FB-mediated photocreation of DBs. When both the densities of DBs and FBs before illumination increase, the light-intensity dependence of the DB density for a moderate value of the illumination time becomes weaker, qualitatively consistent with the observed results. © 2005 Materials Research Society