A photodilatation effect of undoped a-Si:H films has been discovered by a differential dilatometric method. The film thickness has been found to increase instantaneously when the sample is exposed to light. The dilatation weakens with illumination time, following a stretched exponential law, and finally reaches a saturation value. The dilatation disappears when light is off. The results unambiguously show that the whole structure of the film becomes less compact and less stable under light exposure. The metastable change (Staebler-Wronski effect) could be a redistribution of different configurations after this photodilatation in the a-Si:H films
Hydrogenated amorphous silicon based devices lacks behind in their fruitful applications as it suffe...
The inconsistencies associated with the common simple method of evaluating the quality and stability...
Amorphous Si : H films deposited by glow discharge technique are analysed by field effect in both an...
Light and annealing induced changes in Si-H bonds in undoped a-Si:H have been investigated by a diff...
A new model for the formation of metastable Staebler-Wronski defects in a-Si:H has been proposed. Th...
Results on the reversibility of the light-induced saturation and dark- and light-annealing of the de...
LGEP 2013 ID = 1419International audienceThe photostability of the amorphous--crystalline silicon he...
The non-linear change of refractive index and absorption coefficient of a-Si:H films has been measur...
Using photothermal deflection spectroscopy, we have investigated the optical absorption of various a...
金沢大学理工研究域電子情報通信学系The light-intensity dependence of the photocreation of dangling bonds (DBs) were in...
The vast majority of Staebler-Wronski Effect(SWE) studies have been focused on understanding the nat...
The influence of pulsed bias light excitation on the absorption in the defect region of undoped a-Si...
The magnitude of light-induced metastable effects in undoped hydrogenated amorphous silicon (a-Si:H)...
[[abstract]]In recent years there have been many studies explaining the light-induced degradation me...
Device-quality a-Si:H films were prepared by glow discharge CVD with pure or H-diluted silane as wel...
Hydrogenated amorphous silicon based devices lacks behind in their fruitful applications as it suffe...
The inconsistencies associated with the common simple method of evaluating the quality and stability...
Amorphous Si : H films deposited by glow discharge technique are analysed by field effect in both an...
Light and annealing induced changes in Si-H bonds in undoped a-Si:H have been investigated by a diff...
A new model for the formation of metastable Staebler-Wronski defects in a-Si:H has been proposed. Th...
Results on the reversibility of the light-induced saturation and dark- and light-annealing of the de...
LGEP 2013 ID = 1419International audienceThe photostability of the amorphous--crystalline silicon he...
The non-linear change of refractive index and absorption coefficient of a-Si:H films has been measur...
Using photothermal deflection spectroscopy, we have investigated the optical absorption of various a...
金沢大学理工研究域電子情報通信学系The light-intensity dependence of the photocreation of dangling bonds (DBs) were in...
The vast majority of Staebler-Wronski Effect(SWE) studies have been focused on understanding the nat...
The influence of pulsed bias light excitation on the absorption in the defect region of undoped a-Si...
The magnitude of light-induced metastable effects in undoped hydrogenated amorphous silicon (a-Si:H)...
[[abstract]]In recent years there have been many studies explaining the light-induced degradation me...
Device-quality a-Si:H films were prepared by glow discharge CVD with pure or H-diluted silane as wel...
Hydrogenated amorphous silicon based devices lacks behind in their fruitful applications as it suffe...
The inconsistencies associated with the common simple method of evaluating the quality and stability...
Amorphous Si : H films deposited by glow discharge technique are analysed by field effect in both an...