textLight-pipe radiation thermometers (LPRTs) are widely used to monitor temperature during thermal processes, particularly semiconductor wafer Rapid Thermal Processing (RTP). According to the International Technology Roadmap for Semiconductors 2004 (ITRS), temperatures for semiconductor wafer processing should be measurable to within an uncertainty of ± 1.5 ºC at 1,000 ºC with temperature calibration traceable to ITS (international temperature standard)-90. To achieve this uncertainty, there are several issues associated with LPRTs to be resolved. There are three basic effects which could affect LPRT’s temperature measurement are studied in this paper. They are the “drawdown effect”, the “shadow effect” and the “environment effect...
The paper reports on infra-red (IR) measurements made on silicon and gallium arsenide substrates whi...
Semiconductor processing temperatures are currently measured using either py-rometers or thermocoupl...
A numerical model was developed to find the temperature distributions during radiant heating of a si...
The accurate measurement of temperature in Rapid Thermal Processing (RTP), a key technique that pro...
ABSTRACT Light-pipe radiation thermometers are predominantly used to monitor wafer temperature durin...
The main effect of radiation damage in a Silicon-Photolumtiplier (SiPM) is a dramatic increase in th...
Temperature is one of the most important quantities in semiconductor manufacturing. It plays an impo...
Rapid Thermal Processing (RTP) involves heating a single wafer at a high rate, to a high temperature...
Infrared (IR) measurements of the surface temperature of electronic devices have improved over the l...
The influence of patterns on emissivity in silicon wafers in rapid thermal processing systems has be...
Thermal processing is used in various stages of microelectronics fabrication. One of the heating pro...
It is shown that in situ HeNe laser ellipsometric measurements performed during and after rf plasma ...
Thermal processing is used in various stages of microelectronics fabrication. One of the heating pro...
Semiconductor processing temperatures are currently measured using either pyrometers or thermocouple...
A detailed study of an emissivity-correcting pyrometer instrument for measuring wafer surface temper...
The paper reports on infra-red (IR) measurements made on silicon and gallium arsenide substrates whi...
Semiconductor processing temperatures are currently measured using either py-rometers or thermocoupl...
A numerical model was developed to find the temperature distributions during radiant heating of a si...
The accurate measurement of temperature in Rapid Thermal Processing (RTP), a key technique that pro...
ABSTRACT Light-pipe radiation thermometers are predominantly used to monitor wafer temperature durin...
The main effect of radiation damage in a Silicon-Photolumtiplier (SiPM) is a dramatic increase in th...
Temperature is one of the most important quantities in semiconductor manufacturing. It plays an impo...
Rapid Thermal Processing (RTP) involves heating a single wafer at a high rate, to a high temperature...
Infrared (IR) measurements of the surface temperature of electronic devices have improved over the l...
The influence of patterns on emissivity in silicon wafers in rapid thermal processing systems has be...
Thermal processing is used in various stages of microelectronics fabrication. One of the heating pro...
It is shown that in situ HeNe laser ellipsometric measurements performed during and after rf plasma ...
Thermal processing is used in various stages of microelectronics fabrication. One of the heating pro...
Semiconductor processing temperatures are currently measured using either pyrometers or thermocouple...
A detailed study of an emissivity-correcting pyrometer instrument for measuring wafer surface temper...
The paper reports on infra-red (IR) measurements made on silicon and gallium arsenide substrates whi...
Semiconductor processing temperatures are currently measured using either py-rometers or thermocoupl...
A numerical model was developed to find the temperature distributions during radiant heating of a si...