Mesoscopic Structures for Microwave-THz Detection
- Sužied.elis, A.
- Ašmontas, S.
- Požela, J.
- Kundrotas, J.
- Širmulis, E.
- Gradauskas, J.
- Kozič, A.
- Kazlauskaité, V.
- Anbinderis, T.
Publication date
March 2008
DOI Publisher
Institute of Physics, Polish Academy of SciencesAbstract
Properties of microwave detectors of various design on the base of MBE grown GaAs and AlGaAs structures are discussed in this paper: simple asymmetrically shaped structures with heavily doped GaAs and AlGaAs layers of nanometric thickness as well as diodes with two-dimensional electron gas layers. Novel models of the detectors with partially gated two-dimensional electron gas layer as well as with small area GaAs/AlGaAs heterojuction are discussed to demonstrate different ways to increase the voltage sensitivity of the detectors of electromagnetic radiation in GHz-THz frequency range
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