Successful development of microwave technologies requires electromagnetic detectors capable of sensing high frequency signals at low levels of microwave power. Bulk barrier planar microwave diodes operating based on the major carrier phenomena are promising in high frequency electromagnetic radiation sensing applications. The dissertation aimed to develop and investigate new original planar microwave diodes with a lower spread of their electrical parameters and capable of detecting an electromagnetic signal in the millimeter wavelength range. The first chapter reviews the physical properties of microwave diode based detectors with quasi linear and non linear current voltage characteristics and microwave diodes with a two dimensional electro...
Schottky diode was designed and fabricated on n-AlGaAs/GaAs high electron mobility transistor (HEMT)...
© 2018 Wiley Periodicals, Inc. The planar Gunn diode offers the potential of microwave, milli-metric...
In this paper we propose a microwave detector based on a AlGaAs/InGaAs/GaAs structure. Its operation...
We investigate two types of GaAs microwave detector: point contact diode with n-n+ junction and plan...
This thesis deals with fabrication, characterisation and modelling of the Heterostructure Barrier Va...
We propose a microwave diode based on a modulation-doped GaAs/Al(0.25)Ga(0.75)As structure. The prin...
The application of the unique properties of terahertz radiation is increasingly needed in sensors, e...
Properties of microwave detectors of various design on the base of MBE grown GaAs and AlGaAs structu...
The objective of this research is to investigate the possibility of direct integration between III–V...
In the present dissertation, GaAs and GaN Gunn diodes have been investigated with respect to microwa...
The bachelor‘s thesis deals with planar microwave circuits especially directional couplers and micro...
In the paper, the results of research of the electrophysical and frequency characteristics of semico...
the autoheterodyne detection effect in the Gunn diode microwave oscillators operating in the pulse a...
In this paper we reveal electrical detection properties of planar MBE grown GaAs/Al0.25Ga0.75As hete...
The main goal of the thesis was the development of a resistive sensor, a sensing element of which ma...
Schottky diode was designed and fabricated on n-AlGaAs/GaAs high electron mobility transistor (HEMT)...
© 2018 Wiley Periodicals, Inc. The planar Gunn diode offers the potential of microwave, milli-metric...
In this paper we propose a microwave detector based on a AlGaAs/InGaAs/GaAs structure. Its operation...
We investigate two types of GaAs microwave detector: point contact diode with n-n+ junction and plan...
This thesis deals with fabrication, characterisation and modelling of the Heterostructure Barrier Va...
We propose a microwave diode based on a modulation-doped GaAs/Al(0.25)Ga(0.75)As structure. The prin...
The application of the unique properties of terahertz radiation is increasingly needed in sensors, e...
Properties of microwave detectors of various design on the base of MBE grown GaAs and AlGaAs structu...
The objective of this research is to investigate the possibility of direct integration between III–V...
In the present dissertation, GaAs and GaN Gunn diodes have been investigated with respect to microwa...
The bachelor‘s thesis deals with planar microwave circuits especially directional couplers and micro...
In the paper, the results of research of the electrophysical and frequency characteristics of semico...
the autoheterodyne detection effect in the Gunn diode microwave oscillators operating in the pulse a...
In this paper we reveal electrical detection properties of planar MBE grown GaAs/Al0.25Ga0.75As hete...
The main goal of the thesis was the development of a resistive sensor, a sensing element of which ma...
Schottky diode was designed and fabricated on n-AlGaAs/GaAs high electron mobility transistor (HEMT)...
© 2018 Wiley Periodicals, Inc. The planar Gunn diode offers the potential of microwave, milli-metric...
In this paper we propose a microwave detector based on a AlGaAs/InGaAs/GaAs structure. Its operation...