Ag and Cu powders were mechanically alloyed using high-energy planetary milling to evaluate the sinter-bonding characteristics of a die-attach paste containing particles of these two representative conductive metals mixed at atomic scale. This resulted in the formation of completely alloyed Ag-40Cu particles of 9.5 μm average size after 3 h. The alloyed particles exhibited antioxidation properties during heating to 225°C in air; the combination of high pressure and long bonding time at 225°C enhanced the shear strength of the chip bonded using the particles. Consequently, the chips sinter-bonded at 225°C and 10 MPa for 10 min exhibited a sufficient strength of 15.3 MPa. However, an increase in bonding temperature to 250°C was detrimental to...
There is a high demand for the implementation of metallic nanoparticle (NP) sintering technology for...
For decades soldering has been the technology of choice in die bonding. However, due to worldwide he...
A new induction based sintering process for chip level bonding of power electronics component...
Pressure-assisted sinter bonding between an Ag-finished die and an Ag-finished substrate was perform...
Die-attach bonding is a key process to realize high-temperature operation of power semiconductor dev...
A paste containing Cu(II) formate rods was prepared, and characteristics of sinter bonding at 250°C ...
A copper paste based on commercial available copper(II) formate microparticles and polyethylene gly...
To support the harsh environment of power electronics, such as high operating temperature, and high ...
The combination of excellent electrical conductivity and low cost makes copper a good selection for ...
Ag nanoparticle paste is prepared based on the polyol method and subsequent concentration by centrif...
Highly reliable microparticle sinter paste based on etched brass flakes is developed. A low temperat...
In this study, the feasibility of low-cost Cu-sintering technology for power electronics packaging a...
In this work, thermal characteristic of silver-copper (Ag-Cu) nanopaste that consists of a mixture o...
Harsh environment electronics need to maintain their functionality while working at conditions such ...
Power electronic systems are needed in diverse areas such as electricity transmission or electrical ...
There is a high demand for the implementation of metallic nanoparticle (NP) sintering technology for...
For decades soldering has been the technology of choice in die bonding. However, due to worldwide he...
A new induction based sintering process for chip level bonding of power electronics component...
Pressure-assisted sinter bonding between an Ag-finished die and an Ag-finished substrate was perform...
Die-attach bonding is a key process to realize high-temperature operation of power semiconductor dev...
A paste containing Cu(II) formate rods was prepared, and characteristics of sinter bonding at 250°C ...
A copper paste based on commercial available copper(II) formate microparticles and polyethylene gly...
To support the harsh environment of power electronics, such as high operating temperature, and high ...
The combination of excellent electrical conductivity and low cost makes copper a good selection for ...
Ag nanoparticle paste is prepared based on the polyol method and subsequent concentration by centrif...
Highly reliable microparticle sinter paste based on etched brass flakes is developed. A low temperat...
In this study, the feasibility of low-cost Cu-sintering technology for power electronics packaging a...
In this work, thermal characteristic of silver-copper (Ag-Cu) nanopaste that consists of a mixture o...
Harsh environment electronics need to maintain their functionality while working at conditions such ...
Power electronic systems are needed in diverse areas such as electricity transmission or electrical ...
There is a high demand for the implementation of metallic nanoparticle (NP) sintering technology for...
For decades soldering has been the technology of choice in die bonding. However, due to worldwide he...
A new induction based sintering process for chip level bonding of power electronics component...