Electronic structure, energy bands, and magnetic properties of Cr-doped GaN have been calculated from first principles using a 32 atom supercell within the frame work of linearized muffin-tin orbital tight binding method and gradient-corrected density-functional theory. The coupling between Cr atoms is found to be ferromagnetic with a magnetic moment of 2.69μB at each Cr site. The magnetic moments of Ga and N sites are rather small, namely, 0.025μB and −0.025μB, respectively, yielding a total moment of 6μB per supercell. Parallel calculations done on small clusters of Cr-doped GaN also yield similar results indicating that magnetic coupling between Cr atoms results from a local phenomenon. These results are consistent with the recent experi...
First principle calculations of the electronic structure and magnetic interaction of GaN:Gd have bee...
n-type GaN films grown on sapphire by MOCVD were doped with Mn and Cr by solid state diffusion and c...
Cu-doped GaN is a promising candidate for a nitride-based diluted magnetic semiconductor. Theoretica...
Electronic structure, energy bands, and magnetic properties of Cr-doped GaN have been calculated fro...
Large scale density-functional theory calculations have been performed to understand the spatial dis...
Using spin-polarized density-functional theory with exchange and correlation potential, approximated...
A comprehensive theoretical study of the structure and magnetic properties of Cr-doped GaN nanotubes...
Results of extensive density-functional studies provide direct evidence that Cr atoms in Cr:GaN have...
Electronic structure and magnetic properties of Ga1-xCrxN thin films are studied using the gradient ...
Electronic structure and magnetic properties of Ga1-xCrxN thin films are studied using the gradient ...
We report on the magnetic and structural properties of Cr-doped GaN prepared by ion implantation of ...
Cr-doped GaN nanowires have been proposed to be ferromagnetic, resulting from a charge overlap betwe...
Using density functional theory with generalized gradient approximation for exchange and correlation...
Using density functional theory with generalized gradient approximation for exchange and correlation...
First-principles investigations of the structural, electronic, and magnetic properties of Cr-doped A...
First principle calculations of the electronic structure and magnetic interaction of GaN:Gd have bee...
n-type GaN films grown on sapphire by MOCVD were doped with Mn and Cr by solid state diffusion and c...
Cu-doped GaN is a promising candidate for a nitride-based diluted magnetic semiconductor. Theoretica...
Electronic structure, energy bands, and magnetic properties of Cr-doped GaN have been calculated fro...
Large scale density-functional theory calculations have been performed to understand the spatial dis...
Using spin-polarized density-functional theory with exchange and correlation potential, approximated...
A comprehensive theoretical study of the structure and magnetic properties of Cr-doped GaN nanotubes...
Results of extensive density-functional studies provide direct evidence that Cr atoms in Cr:GaN have...
Electronic structure and magnetic properties of Ga1-xCrxN thin films are studied using the gradient ...
Electronic structure and magnetic properties of Ga1-xCrxN thin films are studied using the gradient ...
We report on the magnetic and structural properties of Cr-doped GaN prepared by ion implantation of ...
Cr-doped GaN nanowires have been proposed to be ferromagnetic, resulting from a charge overlap betwe...
Using density functional theory with generalized gradient approximation for exchange and correlation...
Using density functional theory with generalized gradient approximation for exchange and correlation...
First-principles investigations of the structural, electronic, and magnetic properties of Cr-doped A...
First principle calculations of the electronic structure and magnetic interaction of GaN:Gd have bee...
n-type GaN films grown on sapphire by MOCVD were doped with Mn and Cr by solid state diffusion and c...
Cu-doped GaN is a promising candidate for a nitride-based diluted magnetic semiconductor. Theoretica...