The authors observed a drastic reduction of the yellow luminescence (YL) intensity in carbon-doped semi-insulating GaN in air or oxygen ambient as compared to the intensity in vacuum. The YL intensity dropped about 300 times while the exciton emission remained almost unchanged. The authors assume that the donor-acceptor-pair transitions involving a gallium vacancy complex in a thin near-surface region cause the strong YL. Oxygen molecules or ions induce the surface states acting as a very efficient channel of nonradiative recombination. The results indicate that carbon may not be involved in the acceptor responsible for the YL band in GaN:C
This thesis devoted to the experimental studies of yellow and blue luminescence (YL and BL relativel...
We have studied the influence of C and Si ion implantation with different implantation doses on yell...
We have studied a broad photoluminescence band in high-mobility freestanding 200-μm-thick GaN templa...
In high-purity GaN grown by hydride vapor phase epitaxy, the commonly observed yellow luminescence (...
The influence of ion-beam-produced lattice defects as well as H, B, C, N, O, and Si, introduced by ...
Photoluminescence of the dominant deep-level acceptor in high-purity freestanding GaN is studied ove...
Yellow luminescence (YL) of unintentionally doped GaN (u-GaN) peaking at about 2.2 eV has been inves...
Yellow luminescence (YL) of unintentionally doped GaN (u-GaN) peaking at about 2.2 eV has been inves...
The concentration of the acceptor responsible for the yellow luminescence (YL) band at about 2.2eV i...
The properties of a broad 2.86 eV photoluminescence band in carbon-doped GaN were studied as a funct...
Deep level defects responsible for the 2.4 eV photoluminescence (PL) band in a freestanding GaN temp...
We investigated the excitation intensity (U) dependent photoluminescence (PL), at room temperature (...
The influence of ion-beam-produced lattice defects as well as H, B, C, N, O, and Si, introduced by i...
Wurtzite GaN epilayers are studied by cathodoluminescence(CL)spectroscopy. Results show that the int...
We have studied the broad blue band, which emerges in the photoluminescence(PL)spectrum of c-plane G...
This thesis devoted to the experimental studies of yellow and blue luminescence (YL and BL relativel...
We have studied the influence of C and Si ion implantation with different implantation doses on yell...
We have studied a broad photoluminescence band in high-mobility freestanding 200-μm-thick GaN templa...
In high-purity GaN grown by hydride vapor phase epitaxy, the commonly observed yellow luminescence (...
The influence of ion-beam-produced lattice defects as well as H, B, C, N, O, and Si, introduced by ...
Photoluminescence of the dominant deep-level acceptor in high-purity freestanding GaN is studied ove...
Yellow luminescence (YL) of unintentionally doped GaN (u-GaN) peaking at about 2.2 eV has been inves...
Yellow luminescence (YL) of unintentionally doped GaN (u-GaN) peaking at about 2.2 eV has been inves...
The concentration of the acceptor responsible for the yellow luminescence (YL) band at about 2.2eV i...
The properties of a broad 2.86 eV photoluminescence band in carbon-doped GaN were studied as a funct...
Deep level defects responsible for the 2.4 eV photoluminescence (PL) band in a freestanding GaN temp...
We investigated the excitation intensity (U) dependent photoluminescence (PL), at room temperature (...
The influence of ion-beam-produced lattice defects as well as H, B, C, N, O, and Si, introduced by i...
Wurtzite GaN epilayers are studied by cathodoluminescence(CL)spectroscopy. Results show that the int...
We have studied the broad blue band, which emerges in the photoluminescence(PL)spectrum of c-plane G...
This thesis devoted to the experimental studies of yellow and blue luminescence (YL and BL relativel...
We have studied the influence of C and Si ion implantation with different implantation doses on yell...
We have studied a broad photoluminescence band in high-mobility freestanding 200-μm-thick GaN templa...