This paper describes recent progress in large scale numerical simulations for computational nano-electronics using the NEMO3-D package. NEMO3-D is a parallel analysis tool for nano-electronic devices such as quantum dots. The atomistic model used in NEMO3-D leads to large scale computations in two main phases: strain and electronic structure. This paper focuses primarily on the electronic structure phase of the computations. The eigenvalue problem associated with the Hamiltonian matrix is challenging for a number of reasons: (i) the need for very large scale, 100 million to one billion unknowns (ii) the desired eigenvalues (along with the associated eigenvectors) lie in the interior of the spectrum and (iii) the eigenvalues are often degene...
Recent improvements to existing HPC codes NEMO 3-D and OMEN, combined with access to peta-scale comp...
Abstract: Material layers with a thickness of a few nanometers are common-place in today’s semicondu...
A coupled mode space approach within the nonequiibriurn Green\u27s function formalism is presented, ...
In the atomistic simulation of electronic structures (e.g. quantum dots, Fig. 1), it is imperative t...
Device physics and material science meet at the atomic scale of novel nanostructured semiconductors,...
The rapid progress in nanofabrication technologies has led to the development of novel devices and s...
In Part 1, the development and deployment of a general nanoelectronic modeling tool (NEMO 3-D) has b...
Material layers with a thickness of a few nanometers are common-place in today’s semiconductor devic...
The rapid progress in nanofabrication technologies has led to the emergence of new classes of nanode...
Device physics and material science meet at the atomic scale of novel nanostructured semiconductors,...
Abstract―Device physics and material science meet at the atomic scale of novel nanostructured semico...
The rapid progress in nanofabrication technologies has led to the emergence of new classes of nano-d...
The atomistic simulations of electronic structures, using a tight binding model with millions of ato...
Lessons learned in 15 years of NEMO development starting from quantitative and predictive resonant t...
Abstract: Material layers with a thickness of a few nanometers are common-place in today’s semicondu...
Recent improvements to existing HPC codes NEMO 3-D and OMEN, combined with access to peta-scale comp...
Abstract: Material layers with a thickness of a few nanometers are common-place in today’s semicondu...
A coupled mode space approach within the nonequiibriurn Green\u27s function formalism is presented, ...
In the atomistic simulation of electronic structures (e.g. quantum dots, Fig. 1), it is imperative t...
Device physics and material science meet at the atomic scale of novel nanostructured semiconductors,...
The rapid progress in nanofabrication technologies has led to the development of novel devices and s...
In Part 1, the development and deployment of a general nanoelectronic modeling tool (NEMO 3-D) has b...
Material layers with a thickness of a few nanometers are common-place in today’s semiconductor devic...
The rapid progress in nanofabrication technologies has led to the emergence of new classes of nanode...
Device physics and material science meet at the atomic scale of novel nanostructured semiconductors,...
Abstract―Device physics and material science meet at the atomic scale of novel nanostructured semico...
The rapid progress in nanofabrication technologies has led to the emergence of new classes of nano-d...
The atomistic simulations of electronic structures, using a tight binding model with millions of ato...
Lessons learned in 15 years of NEMO development starting from quantitative and predictive resonant t...
Abstract: Material layers with a thickness of a few nanometers are common-place in today’s semicondu...
Recent improvements to existing HPC codes NEMO 3-D and OMEN, combined with access to peta-scale comp...
Abstract: Material layers with a thickness of a few nanometers are common-place in today’s semicondu...
A coupled mode space approach within the nonequiibriurn Green\u27s function formalism is presented, ...