Recent improvements to existing HPC codes NEMO 3-D and OMEN, combined with access to peta-scale computing resources, have enabled realistic device engineering simulations that were previously infeasible. NEMO 3-D can now simulate 1 billion atom systems, and, using 3D spatial decomposition, scale to 32768 cores. Simulation time for the band structure of an experimental P doped Si quantum computing device fell from 40 minutes to I minute. OMEN can perform fully quantum mechanical transport calculations for real-word UTB FETs on 147,456 cores in roughly 5 minutes. Both of these tools power simulation engines on the nanoHUB, giving the community access to previously unavailable research capabilities
Lessons learned in 15 years of NEMO development starting from quantitative and predictive resonant t...
The technology computer aided design of nanometer-scaled semiconductor devices requires appropriate ...
Abstract―Device physics and material science meet at the atomic scale of novel nanostructured semico...
Recent improvements to existing HPC codes NEMO 3-D and OMEN, combined with access to peta-scale comp...
The rapid progress in nanofabrication technologies has led to the emergence of new classes of nano-d...
Lessons learned in 15 years of NEMO development starting from quantitative and predictive resonant t...
We address two challenges with the development of next-generation nanotransistors, (i) the capabilit...
The rapid progress in nanofabrication technologies has led to the development of novel devices and s...
This paper describes recent progress in large scale numerical simulations for computational nano-ele...
Device physics and material science meet at the atomic scale of novel nanostructured semiconductors,...
The rapid progress in nanofabrication technologies has led to the emergence of new classes of nanode...
In Part 1, the development and deployment of a general nanoelectronic modeling tool (NEMO 3-D) has b...
The Nanoelectronic Modeling (NEMO) Toolset has been continually developed over the past 15 years to ...
Researchers have continually developed the Nanoelectronic Modeling (NEMO) toolset over the past 15 y...
The rapid progress in nanofabrication technologies has led to the possibility of realizing scalable ...
Lessons learned in 15 years of NEMO development starting from quantitative and predictive resonant t...
The technology computer aided design of nanometer-scaled semiconductor devices requires appropriate ...
Abstract―Device physics and material science meet at the atomic scale of novel nanostructured semico...
Recent improvements to existing HPC codes NEMO 3-D and OMEN, combined with access to peta-scale comp...
The rapid progress in nanofabrication technologies has led to the emergence of new classes of nano-d...
Lessons learned in 15 years of NEMO development starting from quantitative and predictive resonant t...
We address two challenges with the development of next-generation nanotransistors, (i) the capabilit...
The rapid progress in nanofabrication technologies has led to the development of novel devices and s...
This paper describes recent progress in large scale numerical simulations for computational nano-ele...
Device physics and material science meet at the atomic scale of novel nanostructured semiconductors,...
The rapid progress in nanofabrication technologies has led to the emergence of new classes of nanode...
In Part 1, the development and deployment of a general nanoelectronic modeling tool (NEMO 3-D) has b...
The Nanoelectronic Modeling (NEMO) Toolset has been continually developed over the past 15 years to ...
Researchers have continually developed the Nanoelectronic Modeling (NEMO) toolset over the past 15 y...
The rapid progress in nanofabrication technologies has led to the possibility of realizing scalable ...
Lessons learned in 15 years of NEMO development starting from quantitative and predictive resonant t...
The technology computer aided design of nanometer-scaled semiconductor devices requires appropriate ...
Abstract―Device physics and material science meet at the atomic scale of novel nanostructured semico...