The smooth quantum hydrodynamic model is an extension of the classical hydrodynamic model for semiconductor devices which can handle in a mathematically rigorous way the discontinuities in the classical potential energy which occur at heterojunction barriers in quantum semiconductor devices. Smooth QHD model simulations of the current-voltage curves of resonant tunneling diodes are presented which exhibit negative differential resistance—the experimental signal for quantum resonance effects—and are compared with the experimentally verified current-voltage curves predicted by the simulator NEMO, which uses a non-equilibrium Green function method
The transient and stationary characteristics of a one-dimensional quantum hydrodynamic model are com...
The classical and quantum hydrodynamic equations are presented in a unified formula-tion and the 3D ...
In this paper, utilising the non-equilibrium Green’s function (NEGF) formalism within the new device...
The “smooth” quantum hydrodynamic (QHD) model is derived specifically to handle in a mathematically ...
An extension of the classical hydrodynamic model for semiconductor devices to include quantum transp...
Smooth quantum hydrodynamic (QHD) model simulations of the resonant tunneling diode are presented wh...
A new quantum hydrodynamic (QHD) model for semiconductor devices is pre-sented. The quantum hydrodyn...
The phenomenon of resonant tunneling is simulated and analyzed in the quantum hydrodynamic (QHD) mod...
Abstract. The classical hydrodynamic equations can be extended to include quantum effects by incorpo...
Semiconductor models based on classical or semi\--classical mechanics (like the drift-diffusion equ...
Smooth quantum hydrodynamic (QHD) model simulations of the current–voltage curve of a resonant tunne...
Smooth quantum hydrodynamic (QHD) model simulations of the current–voltage curve of a resonant tunne...
AbstractThe quantum hydrodynamic model is primary used for the simulation of resonant tunneling diod...
We investigate the validity of stationary simulations for semiconductor quantum charge transport in...
This paper presents the effects of structural parameters like Quantum well width, barrier width, spa...
The transient and stationary characteristics of a one-dimensional quantum hydrodynamic model are com...
The classical and quantum hydrodynamic equations are presented in a unified formula-tion and the 3D ...
In this paper, utilising the non-equilibrium Green’s function (NEGF) formalism within the new device...
The “smooth” quantum hydrodynamic (QHD) model is derived specifically to handle in a mathematically ...
An extension of the classical hydrodynamic model for semiconductor devices to include quantum transp...
Smooth quantum hydrodynamic (QHD) model simulations of the resonant tunneling diode are presented wh...
A new quantum hydrodynamic (QHD) model for semiconductor devices is pre-sented. The quantum hydrodyn...
The phenomenon of resonant tunneling is simulated and analyzed in the quantum hydrodynamic (QHD) mod...
Abstract. The classical hydrodynamic equations can be extended to include quantum effects by incorpo...
Semiconductor models based on classical or semi\--classical mechanics (like the drift-diffusion equ...
Smooth quantum hydrodynamic (QHD) model simulations of the current–voltage curve of a resonant tunne...
Smooth quantum hydrodynamic (QHD) model simulations of the current–voltage curve of a resonant tunne...
AbstractThe quantum hydrodynamic model is primary used for the simulation of resonant tunneling diod...
We investigate the validity of stationary simulations for semiconductor quantum charge transport in...
This paper presents the effects of structural parameters like Quantum well width, barrier width, spa...
The transient and stationary characteristics of a one-dimensional quantum hydrodynamic model are com...
The classical and quantum hydrodynamic equations are presented in a unified formula-tion and the 3D ...
In this paper, utilising the non-equilibrium Green’s function (NEGF) formalism within the new device...