Numerical simulation of the smooth quantum hydrodynamic model for semiconductor devices

An extension of the classical hydrodynamic model for semiconductor devices to include quantum transport eects is reviewed. This ‘‘smooth’ ’ quantum hydrodynamic (QHD) model is derived specifically to handle in a mathematically rigorous way the discontinuities in the classical potential energy which occur at heterojunction barriers in quantum semiconductor devices. A conservative upwind discretization of the one-dimensional (1D) steady-state smooth QHD equations is outlined. Smooth QHD model simulations of the resonant tunneling diode are presented which exhibit enhanced negative dierential resistance when compared with simulations usin