We present a study on the scaling behavior of field-effect transistors in the quantum-capacitance limit (QCL). It will be shown that a significant performance improvement in terms of the power delay product can be obtained in devices scaled toward the QCL. As a result, nanowires or nanotubes exhibiting a 1-D transport are a premier choice as active channel materials for transistor devices since the QCL can be attained in such systems
—This work investigates the impact of quantum mechanical effects on the device performance of n-typ...
Low-dimensional materials such as layered semiconductors or carbon nanotubes (CNTs) have been attrac...
Low-dimensional materials such as layered semiconductors or carbon nanotubes (CNTs) have been attrac...
In this paper, we focus on the performance of a nanowire field-effect transistor in the ultimate qua...
In this paper, we focus on the performance of a nanowire Field Effect Transistor (FET) in the Ultima...
In The proposed paper several interesting phenomenon that happens at Quantum Conductance Limit (QCL)...
In this work we investigate the impact of quantum mechanical effects on the device performance of n-...
In this work we investigate the impact of quantum mechanical effects on the device performance of n-...
As the physical dimensions of a transistor gate continue to shrink to a few atoms, performance can b...
Nonquasistatic effects in ac characteristics of carbon nanotube field-effect transistors are examine...
In this work we investigate the impact of quantum mechanical effects on the device performance of n-...
Thesis (S.M.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer S...
Self-consistent quantum simulations are used to explore the high-frequency performance potential of ...
Our focus in this study is on characterizing the capacitance voltage (C-V) behavior of Bernal stacki...
This article presented at the IEEE Region 10 Annual International Conference [© 2016 IEEE] and the d...
—This work investigates the impact of quantum mechanical effects on the device performance of n-typ...
Low-dimensional materials such as layered semiconductors or carbon nanotubes (CNTs) have been attrac...
Low-dimensional materials such as layered semiconductors or carbon nanotubes (CNTs) have been attrac...
In this paper, we focus on the performance of a nanowire field-effect transistor in the ultimate qua...
In this paper, we focus on the performance of a nanowire Field Effect Transistor (FET) in the Ultima...
In The proposed paper several interesting phenomenon that happens at Quantum Conductance Limit (QCL)...
In this work we investigate the impact of quantum mechanical effects on the device performance of n-...
In this work we investigate the impact of quantum mechanical effects on the device performance of n-...
As the physical dimensions of a transistor gate continue to shrink to a few atoms, performance can b...
Nonquasistatic effects in ac characteristics of carbon nanotube field-effect transistors are examine...
In this work we investigate the impact of quantum mechanical effects on the device performance of n-...
Thesis (S.M.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer S...
Self-consistent quantum simulations are used to explore the high-frequency performance potential of ...
Our focus in this study is on characterizing the capacitance voltage (C-V) behavior of Bernal stacki...
This article presented at the IEEE Region 10 Annual International Conference [© 2016 IEEE] and the d...
—This work investigates the impact of quantum mechanical effects on the device performance of n-typ...
Low-dimensional materials such as layered semiconductors or carbon nanotubes (CNTs) have been attrac...
Low-dimensional materials such as layered semiconductors or carbon nanotubes (CNTs) have been attrac...