Unipolar barrier structures based on HgCdTe for infrared detection

One of the topical areas of solid state photoelectronics is the creation of infrared detectors based on unipolar barrier systems (for example, with an nBn architecture). The greatest progress has been achieved in the development of barrier detectors based on semiconductors of the AIIIBV group, which is associated with the possibility of realizing systems with a zero barrier in the valence band. Unipolar barrier detectors based on mercury cadmium telluride (HgCdTe) grown by molecular beam epitaxy (MBE) are of interest due to significant technological advantages, since the creation of such devices can abandon the defect forming procedure of ion implantation. Despite a significant number of theoretical works, only a few attempts are known to practically implement nBn detectors based on MBE HgCdTe