Metal-insulator-semiconductor (MIS) structures were fabricated by depositing an Al2O3 dielectric o
The paper presents brief research results of the admittance of metal-insulator- semiconductor (MIS) ...
Admittance of MIS structures based on n(p)- Hg1–xCdxTe (at x from 0.22 to 0.40) with SiO2/Si3N4, Al2...
Metal–insulator–semiconductor structures based on n-Hg1−xCdxTe (x = 0.19–0.25) were grown by molecul...
Mid-wave infrared nBn structures based on HgCdTe grown by molecular beam epitaxy on GaAs (013) subst...
The results of studying the admittance of unipolar barrier structures based on HgCdTe grown by molec...
The paper presents the results of studies of the admittance of MIS structures based on heteroepitaxi...
The admittance of nBn structures based on HgCdTe grown by molecular beam epitaxy (MBE) on GaAs (013)...
The impact of the presence of the near-surface graded-gap layers with an increased content of CdTe o...
Impact of illumination on the admittance of the MIS structures based on MBE Hg1-xCdxTe with graded-g...
The effect of As+ ion implantation on the electrical properties of the near-surface layer of n-HgCdT...
The effect of As+ ion implantation on the electrical properties of the near-surface layer of n-HgCdT...
The effect of As+ ion implantation on the electrical properties of the near-surface layer of n-HgCdT...
The effect of As+ ion implantation on the electrical properties of the near-surface layer of n-HgCdT...
The admittance of test MIS structures based on nBn systems from Hg1 – xCdxTe grown by molecular beam...
The paper presents brief research results of the admittance of metal-insulator- semiconductor (MIS) ...
The paper presents brief research results of the admittance of metal-insulator- semiconductor (MIS) ...
Admittance of MIS structures based on n(p)- Hg1–xCdxTe (at x from 0.22 to 0.40) with SiO2/Si3N4, Al2...
Metal–insulator–semiconductor structures based on n-Hg1−xCdxTe (x = 0.19–0.25) were grown by molecul...
Mid-wave infrared nBn structures based on HgCdTe grown by molecular beam epitaxy on GaAs (013) subst...
The results of studying the admittance of unipolar barrier structures based on HgCdTe grown by molec...
The paper presents the results of studies of the admittance of MIS structures based on heteroepitaxi...
The admittance of nBn structures based on HgCdTe grown by molecular beam epitaxy (MBE) on GaAs (013)...
The impact of the presence of the near-surface graded-gap layers with an increased content of CdTe o...
Impact of illumination on the admittance of the MIS structures based on MBE Hg1-xCdxTe with graded-g...
The effect of As+ ion implantation on the electrical properties of the near-surface layer of n-HgCdT...
The effect of As+ ion implantation on the electrical properties of the near-surface layer of n-HgCdT...
The effect of As+ ion implantation on the electrical properties of the near-surface layer of n-HgCdT...
The effect of As+ ion implantation on the electrical properties of the near-surface layer of n-HgCdT...
The admittance of test MIS structures based on nBn systems from Hg1 – xCdxTe grown by molecular beam...
The paper presents brief research results of the admittance of metal-insulator- semiconductor (MIS) ...
The paper presents brief research results of the admittance of metal-insulator- semiconductor (MIS) ...
Admittance of MIS structures based on n(p)- Hg1–xCdxTe (at x from 0.22 to 0.40) with SiO2/Si3N4, Al2...
Metal–insulator–semiconductor structures based on n-Hg1−xCdxTe (x = 0.19–0.25) were grown by molecul...
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