As silicon technology scaling, leakage power dissipation has become the most significant component from all CMOS power dissipation mechanisms. Minimum Leakage Vector(MLV) is used as a combinational logic leakage power reduction technique when a system is in standby mode. Compared to MLV, though an excellent leakage power reduction can be achieved with power gating technique it has some drawbacks like higher retention time and system state loss. In this thesis we combine MLV and power gating techniques to achieve more leakage power reduction compared to MLV while mitigating prior mentioned drawbacks of power gating. Instead of full chip power gating, we developed a simple algorithm which runs in linear time to identify the prospective loca...
Due to semiconductor technology advancements, the static power dissipation caused by leakage current...
Scaling of CMOS technology has enabled a phenomenal growth in computing capability throughout the la...
With aggressive scaling of device dimensions, threshold voltages and oxide-thicknesses, leakage-powe...
In order to reduce the power dissipation of CMOS products, semiconductor manufacturers are reducing ...
In order to reduce the power dissipation of CMOS products, semiconductor manufacturers are reducing ...
Leakage power has become a serious concern in nanometer CMOS technologies and is a very important is...
AbstractThe leakage power dissipation has become one of the most challenging issues in low power VLS...
ABSTRACT: In most recent CMOS feature sizes (e.g., 90nm and 45nm), leakage power dissipation has bec...
Leakage power loss is a major concern in deep-submicron technologies. High-performance processors an...
Most of the portable systems, such as cellular communication devices, and laptop computers operate f...
Due to semiconductor technology advancements, the static power dissipation caused by leakage current...
Due to the exponential increase of subthreshold and gate leakage currents with technology scaling, l...
Minimizing dynamic power consumption in digital circuits was the primary design objective in most of...
As technology scales down and CMOS circuits are powered by lower supply voltages, standby leakage cu...
As technology scales down and CMOS circuits are powered by lower supply voltages, standby leakage cu...
Due to semiconductor technology advancements, the static power dissipation caused by leakage current...
Scaling of CMOS technology has enabled a phenomenal growth in computing capability throughout the la...
With aggressive scaling of device dimensions, threshold voltages and oxide-thicknesses, leakage-powe...
In order to reduce the power dissipation of CMOS products, semiconductor manufacturers are reducing ...
In order to reduce the power dissipation of CMOS products, semiconductor manufacturers are reducing ...
Leakage power has become a serious concern in nanometer CMOS technologies and is a very important is...
AbstractThe leakage power dissipation has become one of the most challenging issues in low power VLS...
ABSTRACT: In most recent CMOS feature sizes (e.g., 90nm and 45nm), leakage power dissipation has bec...
Leakage power loss is a major concern in deep-submicron technologies. High-performance processors an...
Most of the portable systems, such as cellular communication devices, and laptop computers operate f...
Due to semiconductor technology advancements, the static power dissipation caused by leakage current...
Due to the exponential increase of subthreshold and gate leakage currents with technology scaling, l...
Minimizing dynamic power consumption in digital circuits was the primary design objective in most of...
As technology scales down and CMOS circuits are powered by lower supply voltages, standby leakage cu...
As technology scales down and CMOS circuits are powered by lower supply voltages, standby leakage cu...
Due to semiconductor technology advancements, the static power dissipation caused by leakage current...
Scaling of CMOS technology has enabled a phenomenal growth in computing capability throughout the la...
With aggressive scaling of device dimensions, threshold voltages and oxide-thicknesses, leakage-powe...